NDT2955 Model Download Search Results

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Image	Part Number	D.S	Description	Package Category	Prices / Stock	Model	Action
	NDT2955 onsemi	1	High density cell design for extremely low RDS(ON); High power and current handling capability in a widelyused surface mount package.; RDS(ON) = 300mΩ @ VGS = -10V; -2.5A, -60V; RDS(ON) = 500mΩ @ VGS = -4.5V	SOT223 (3-Pin)	NDT2955	3D model available Symbol and footprint available 3	1 Download Model
	NDT2955 National Semiconductor Corporation	1	Power Field-Effect Transistor, 2.5A I(D), 60V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261		NDT2955	3D model not available Symbol and footprint not available 0	0 Build or Request
	NDT2955 Fairchild Semiconductor Corporation	1	Power Field-Effect Transistor, 2.5A I(D), 60V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET		NDT2955	3D model not available Symbol and footprint not available 0	0 Build or Request
	NDT2955 Rochester Electronics LLC	1	2.5A, 60V, 0.3ohm, P-CHANNEL, Si, POWER, MOSFET		NDT2955	3D model not available Symbol and footprint not available 0	0 Build or Request

	NDT2955 Texas Instruments	1	2.5A, 60V, 0.3ohm, P-CHANNEL, Si, POWER, MOSFET, TO-261		NDT2955	3D model not available Symbol and footprint not available 0	0 Build or Request
	NDT2955D84Z Fairchild Semiconductor Corporation	1	Power Field-Effect Transistor, 2.5A I(D), 60V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET		NDT2955D84Z	3D model not available Symbol and footprint not available 0	0 Build or Request
	NDT2955_NL Fairchild Semiconductor Corporation	1	Power Field-Effect Transistor, 2.5A I(D), 60V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET		NDT2955_NL	3D model not available Symbol and footprint not available 0	0 Build or Request
	NDT2955/J23Z Texas Instruments	1	2.5A, 60V, 0.3ohm, P-CHANNEL, Si, POWER, MOSFET		NDT2955/J23Z	3D model not available Symbol and footprint not available 0	0 Build or Request
	NDT2955/D84Z Texas Instruments	1	2.5A, 60V, 0.3ohm, P-CHANNEL, Si, POWER, MOSFET, TO-261		NDT2955/D84Z	3D model not available Symbol and footprint not available 0	0 Build or Request
	NDT2955L99Z Fairchild Semiconductor Corporation	1	Power Field-Effect Transistor, 2.5A I(D), 60V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET		NDT2955L99Z	3D model not available Symbol and footprint not available 0	0 Build or Request
	NDT2955/S62Z Texas Instruments	1	2.5A, 60V, 0.3ohm, P-CHANNEL, Si, POWER, MOSFET, TO-261		NDT2955/S62Z	3D model not available Symbol and footprint not available 0	0 Build or Request
	NDT2955S62Z Fairchild Semiconductor Corporation	1	Power Field-Effect Transistor, 2.5A I(D), 60V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET		NDT2955S62Z	3D model not available Symbol and footprint not available 0	0 Build or Request
	NDT2955J23Z Fairchild Semiconductor Corporation	1	Power Field-Effect Transistor, 2.5A I(D), 60V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET		NDT2955J23Z	3D model not available Symbol and footprint not available 0	0 Build or Request
	NDT2955/L99Z Texas Instruments	1	2.5A, 60V, 0.3ohm, P-CHANNEL, Si, POWER, MOSFET, TO-261		NDT2955/L99Z	3D model not available Symbol and footprint not available 0	0 Build or Request
	NDT2955L84Z Fairchild Semiconductor Corporation	1	Power Field-Effect Transistor, 2.5A I(D), 60V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET		NDT2955L84Z	3D model not available Symbol and footprint not available 0	0 Build or Request

	FHNDT2955 Fenghua (HK) Electronics Ltd	1	Transistor		FHNDT2955	3D model not available Symbol and footprint not available 0	0 Build or Request

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