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FDMC86260 - onsemi

Description: Termination is Lead-free ; Max rDS(on) = 34 mΩ at VGS = 10 V, ID = 5.4 A ; Max rDS(on) = 44 mΩ at VGS = 6 V, ID = 4.8 A ; High performance technology for extremely low rDS(on) ; RoHS Compliant ; 100% UIL Tested

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PCB Footprints
FDMC86260 - onsemi PCB footprint - Other - Other - PQFN8 3.3X3.3, 0.65P CASE 483AW ISSUE O-1
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3D Models
FDMC86260 - onsemi  - 3D model - Other - PQFN8 3.3X3.3, 0.65P CASE 483AW ISSUE O-1
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FDMC86260 Details

  • Manufacturer Part Number:

    FDMC86260

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    PQFN-8

  • Manufacturer Package Code:

    483AW

  • Country Of Origin:

    Philippines

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    9 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    6.12

  • Avalanche Energy Rating (Eas):

    121 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    150 V

  • Drain Current-Max (ID):

    5.4 A

  • Drain-source On Resistance-Max:

    0.034 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    MO-240BA

  • JESD-30 Code:

    S-PDSO-N5

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    5

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    SQUARE

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    54 W

  • Pulsed Drain Current-Max (IDM):

    48 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    NO LEAD

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

FDMC86260 Frequently Asked Questions (FAQs)

  • A 2-layer or 4-layer PCB with a solid ground plane and thermal vias is recommended. Keep the thermal pad connected to the ground plane to improve heat dissipation.
  • Ensure proper heat sinking, use a thermal interface material, and follow the recommended PCB layout. Also, consider derating the device's power handling at high temperatures.
  • The maximum allowable voltage on the input pins is 5.5V, which is the absolute maximum rating. However, for reliable operation, it's recommended to keep the input voltage below 5V.
  • Yes, the FDMC86260 is suitable for high-frequency switching applications up to 100 kHz. However, ensure proper PCB layout, decoupling, and filtering to minimize EMI and noise.
  • Use a voltage regulator or a TVS diode to protect against overvoltage. For overcurrent protection, use a fuse or a current-sensing resistor with a comparator or a dedicated overcurrent protection IC.

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FDMC86260 Overview

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Part Image FDMC86260 Fairchild Semiconductor Corporation

Power Field-Effect Transistor, 5.4A I(D), 150V, 0.034ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240BA