Part Image

FDMC86570LET60 - onsemi

Description: Termination is Lead-free ; Max rDS(on) = 6.5 mΩ at VGS = 4.5 V, ID = 15 A ; High performance technology for extremely low rDS(on) ; RoHS Compliant; Shielded Gate MOSFET Technology ; Max rDS(on) = 4.3 mΩ at VGS = 10 V, ID = 18 A

Download FDMC86570LET60 Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
PCB Footprints
FDMC86570LET60 - onsemi PCB footprint - Other - Other - PQFN8 3.3X3.3, 0.65P CASE 483AW ISSUE O
click to zoom
3D Models
FDMC86570LET60 - onsemi  - 3D model - Other - PQFN8 3.3X3.3, 0.65P CASE 483AW ISSUE O
click to zoom

FDMC86570LET60 Details

  • Manufacturer Part Number:

    FDMC86570LET60

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    PQFN-8

  • Manufacturer Package Code:

    483AW

  • Country Of Origin:

    Philippines

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    9 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    3

  • Avalanche Energy Rating (Eas):

    253 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    60 V

  • Drain Current-Max (ID):

    87 A

  • Drain-source On Resistance-Max:

    0.0043 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    MO-240BA

  • JESD-30 Code:

    S-PDSO-N5

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    5

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    SQUARE

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    65 W

  • Pulsed Drain Current-Max (IDM):

    436 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    NO LEAD

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Max (toff):

    71 ns

  • Turn-on Time-Max (ton):

    46 ns

FDMC86570LET60 Frequently Asked Questions (FAQs)

  • A 2-layer or 4-layer PCB with a solid ground plane and thermal vias is recommended. The device should be placed near a thermal pad or heat sink to dissipate heat efficiently.
  • Ensure proper heat sinking, use a thermal interface material, and follow the recommended PCB layout guidelines. Also, consider derating the device's power handling at high temperatures.
  • The maximum allowed voltage on the gate driver output is 15V, but it's recommended to keep it below 12V to ensure reliable operation and minimize electromagnetic interference (EMI).
  • Yes, the FDMC86570LET60 can be used in a half-bridge configuration, but ensure proper dead-time management and consider the device's maximum allowed voltage and current ratings.
  • Use a shielded cable for the gate driver output, keep the PCB layout compact, and consider adding EMI filters or shielding to the device and surrounding components.

Trust Checks

This model has been built in collaboration with the manufacturer.
Manufacturer Collaborated
This model has been verified by system checks.
System Verified
This model has been reviewed by community users.
Community Approved
Sponsored

FDMC86570LET60 Overview

Use the download button to access the FDMC86570LET60 schematic symbol, PCB footprint, and 3D model.
To find more CAD model downloads similar to this part, try a partial part number search, like FDMC8, or try a keyword search, such as Power Field-Effect Transistors

Parts related to FDMC86570LET60

Showing 0 results