Part Image

FDMC8878 - onsemi

Description: RoHS compliant ; Max rDS(on) = 14mΩ at VGS = 10V, ID = 9.6A ; Max rDS(on) = 17mΩ at VGS = 4.5V, ID = 8.7A ; Low Profile–1mm max in MLP 3.3X3.3

Download FDMC8878 Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
PCB Footprints
FDMC8878 - onsemi PCB footprint - Other - Other - WDFN8 3.3x3.3, 0.65P CASE 511DH ISSUE O
click to zoom
3D Models
FDMC8878 - onsemi  - 3D model - Other - WDFN8 3.3x3.3, 0.65P CASE 511DH ISSUE O
click to zoom

FDMC8878 Details

  • Manufacturer Part Number:

    FDMC8878

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    WDFN-8

  • Package Description:

    WDFN-8

  • Manufacturer Package Code:

    511DH

  • Country Of Origin:

    Thailand

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    30 V

  • Drain Current-Max (ID):

    9.6 A

  • Drain-source On Resistance-Max:

    0.014 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    S-PDSO-N5

  • JESD-609 Code:

    e4

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    5

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    SQUARE

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    31 W

  • Pulsed Drain Current-Max (IDM):

    60 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Nickel/Palladium/Gold/Silver (Ni/Pd/Au/Ag)

  • Terminal Form:

    NO LEAD

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

FDMC8878 Frequently Asked Questions (FAQs)

  • A 2-layer or 4-layer PCB with a solid ground plane and thermal vias is recommended. Keep the thermal pad connected to the ground plane to improve heat dissipation.
  • Ensure proper heat sinking, use a thermal interface material, and follow the recommended PCB layout. Also, consider derating the device's power handling at high temperatures.
  • The maximum allowable voltage on the enable pin (EN) is 6V. Exceeding this voltage may damage the device.
  • Yes, but ensure that the device is properly bypassed and decoupled to minimize electromagnetic interference (EMI). Follow the recommended layout and decoupling guidelines.
  • Use a TVS diode or a zener diode to clamp the voltage and protect the device from EOS. Also, ensure that the device is operated within the recommended voltage and current ratings.

Trust Checks

This model has been built in collaboration with the manufacturer.
Manufacturer Collaborated
This model has been verified by system checks.
System Verified
This model has been reviewed by community users.
Community Approved
Sponsored

FDMC8878 Overview

Use the download button to access the FDMC8878 schematic symbol, PCB footprint, and 3D model.
To find more CAD model downloads similar to this part, try a partial part number search, like FDMC8, or try a keyword search, such as Power Field-Effect Transistors

Parts related to FDMC8878

Showing 0 results

FDMC8878 Alternates

Showing results

Image Part Number Model
Part Image FDMC8878-F127 Fairchild Semiconductor Corporation

Power Field-Effect Transistor, 16.5A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET

Part Image FDMC8878-F126 Fairchild Semiconductor Corporation

Power Field-Effect Transistor, 16.5A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET