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FDMD86100 - onsemi

Description: 100% UIL tested ; Max rDS(on) = 10.5 mΩ at VGS = 10 V, ID = 10 A ; Max rDS(on) = 17.3 mΩ at VGS = 6 V, ID = 7.8 A ; Ideal for flexible layout in secondary side synchronous rectification ; Termination is Lead-free and RoHS Compliant ; Shielded Gate MOSFET Technology ; Common source configuration to eliminate PCB routing; Large source pad on bottom of package for enhanced thermals

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PCB Footprints
FDMD86100 - onsemi PCB footprint - Other - Other - PQFN8 5X6, 1.27P CASE 483AS ISSUE A
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3D Models
FDMD86100 - onsemi  - 3D model - Other - PQFN8 5X6, 1.27P CASE 483AS ISSUE A
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FDMD86100 Details

  • Manufacturer Part Number:

    FDMD86100

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    PQFN-8

  • Manufacturer Package Code:

    483AS

  • Country Of Origin:

    Philippines

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    111 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    337 mJ

  • Case Connection:

    SOURCE

  • Configuration:

    COMMON SOURCE, 2 ELEMENTS WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    100 V

  • Drain Current-Max (ID):

    39 A

  • Drain-source On Resistance-Max:

    0.0105 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    20 pF

  • JEDEC-95 Code:

    MO-240AA

  • JESD-30 Code:

    R-PDSO-N8

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    2

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    33 W

  • Pulsed Drain Current-Max (IDM):

    299 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    NO LEAD

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Max (toff):

    42 ns

  • Turn-on Time-Max (ton):

    33 ns

FDMD86100 Frequently Asked Questions (FAQs)

  • A 4-layer PCB with a solid ground plane and a separate power plane is recommended. Keep the input and output traces as short as possible and use a common mode choke to reduce EMI.
  • The FDMD86100 requires a bias voltage of 5V on the VCC pin and a bias current of 10mA on the VBIAS pin. Ensure the bias voltage is stable and noise-free for optimal performance.
  • The FDMD86100 is rated for operation from -40°C to 125°C. However, the device may require derating for high-temperature operation to ensure reliability.
  • Use a voltage regulator to limit the input voltage to 5V, and add overcurrent protection using a fuse or a current-limiting resistor to prevent damage to the device.
  • The recommended input impedance is 50 ohms, and the recommended output impedance is 50 ohms or lower to ensure optimal signal integrity.

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FDMD86100 Overview

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