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FDMS1D2N03DSD - onsemi

Description: Q1: Max RDS(on) = 4.0 mOhm at Vgs = 4.5V; Q2: Max RDS(on) = 0.97 mOhm at Vgs = 10V; Q2: Max RDS(on) = 1.25 mOhm at Vgs = 4.5V; Low Inductance Packaging Shortens Rise/Fall Times, Resulting in Lower Switching Losses; MOSFET Integration Enables Optimum Layout for Lower Circuit Inductance and Reduced Switch Node Ringing; Q1: Max RDS(on) = 3.25 mOhm at Vgs = 10V

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FDMS1D2N03DSD - onsemi PCB footprint - Other - Other - FDMS1D2N03DSD-2
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FDMS1D2N03DSD - onsemi  - 3D model - Other - FDMS1D2N03DSD-2
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FDMS1D2N03DSD Details

  • Manufacturer Part Number:

    FDMS1D2N03DSD

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    PQFN-8

  • Manufacturer Package Code:

    483AR

  • Country Of Origin:

    Philippines

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    121 mJ

  • Configuration:

    SINGLE WITH BUILT-IN MOSFET AND DIODE

  • DS Breakdown Voltage-Min:

    30 V

  • Drain Current-Max (ID):

    70 A

  • Drain-source On Resistance-Max:

    0.00325 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    MO-229

  • JESD-30 Code:

    R-PDSO-N8

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    26 W

  • Pulsed Drain Current-Max (IDM):

    362 A

  • Surface Mount:

    YES

  • Terminal Finish:

    MATTE TIN

  • Terminal Form:

    NO LEAD

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

FDMS1D2N03DSD Frequently Asked Questions (FAQs)

  • A recommended PCB layout for optimal thermal performance would be to use a 2-layer or 4-layer board with a solid ground plane on the bottom layer, and to place thermal vias under the device to dissipate heat efficiently.
  • To ensure proper biasing, follow the recommended operating conditions in the datasheet, and use a stable voltage source with minimal ripple. Additionally, ensure the input and output capacitors are properly sized and placed close to the device.
  • Operating the device beyond the recommended temperature range can lead to reduced performance, increased power consumption, and potentially even device failure. It's essential to ensure the device is operated within the specified temperature range to maintain reliability and performance.
  • To troubleshoot issues, start by verifying the device is properly biased and the input and output voltages are within the recommended range. Check for any signs of overheating, and ensure the PCB layout is correct. If issues persist, consult the datasheet and application notes, or contact onsemi support for further assistance.
  • Yes, as with any high-frequency device, it's essential to follow proper EMI/EMC design practices, such as using a solid ground plane, minimizing trace lengths, and using shielding or filtering components as needed. Consult the datasheet and application notes for specific guidance on EMI/EMC considerations.

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