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FDMS2D5N08C - onsemi

Description: Shielded Gate MOSFET Technology; Max rDS(on) = 2.7 mΩ at VGS = 10 V, ID = 68 A; Max rDS(on) = 6.7 mΩ at VGS = 6 V, ID = 34 A; 50% lower Qrr than other MOSFET suppliers; Lower switching noise/EMI; MSL1 robust package design; 100% UIL tested; RoHS Compliant

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PCB Footprints
FDMS2D5N08C - onsemi PCB footprint - Other - Other - FDMS2D5N08C-2
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FDMS2D5N08C - onsemi  - 3D model - Other - FDMS2D5N08C-2
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FDMS2D5N08C Details

  • Manufacturer Part Number:

    FDMS2D5N08C

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    PQFN-8

  • Manufacturer Package Code:

    483AF

  • Country Of Origin:

    Philippines

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    11 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    5.9

  • Avalanche Energy Rating (Eas):

    600 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    80 V

  • Drain Current-Max (ID):

    166 A

  • Drain-source On Resistance-Max:

    0.0027 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    85 pF

  • JEDEC-95 Code:

    MO-240AA

  • JESD-30 Code:

    R-PDSO-N5

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    5

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    138 W

  • Pulsed Drain Current-Max (IDM):

    823 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    NO LEAD

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Max (toff):

    60 ns

  • Turn-on Time-Max (ton):

    54 ns

FDMS2D5N08C Frequently Asked Questions (FAQs)

  • The maximum operating frequency of the FDMS2D5N08C is 100 kHz, but it can be operated at higher frequencies with reduced performance.
  • To ensure proper biasing, the FDMS2D5N08C requires a supply voltage (VCC) between 4.5V and 5.5V, and a gate-source voltage (VGS) between -2V and 2V. Additionally, the device should be operated within the recommended operating conditions specified in the datasheet.
  • The maximum power dissipation of the FDMS2D5N08C is 1.5W, and it is recommended to use a heat sink to ensure reliable operation.
  • The FDMS2D5N08C is rated for operation up to 150°C, but the device's performance may degrade at higher temperatures. It is recommended to derate the device's power handling and operating frequency at elevated temperatures.
  • To protect the FDMS2D5N08C from ESD, it is recommended to handle the device in an ESD-controlled environment, use ESD-protective packaging, and follow proper handling and storage procedures.

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FDMS2D5N08C Overview

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