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FDMS7570S - onsemi

Description: Obsolete - N-Channel PowerTrench SyncFET 25V, 49A, 2.9mΩ

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PCB Footprints
FDMS7570S - onsemi PCB footprint - Other - Other - PQFN8 5X6, 1.27P CASE 483AE ISSUE A_2019OCT
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3D Models
FDMS7570S - onsemi  - 3D model - Other - PQFN8 5X6, 1.27P CASE 483AE ISSUE A_2019OCT
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FDMS7570S Details

  • Manufacturer Part Number:

    FDMS7570S

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    PQFN-8

  • Package Description:

    ROHS COMPLIANT, POWER 56, 8 PIN

  • Manufacturer Package Code:

    483AE

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    4 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    144 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    25 V

  • Drain Current-Max (ID):

    28 A

  • Drain-source On Resistance-Max:

    0.00195 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    MO-240AA

  • JESD-30 Code:

    R-PDSO-F5

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    5

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    83 W

  • Pulsed Drain Current-Max (IDM):

    180 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

FDMS7570S Frequently Asked Questions (FAQs)

  • A good thermal design is crucial for the FDMS7570S. A recommended layout includes a thermal pad on the bottom of the package, connected to a large copper area on the PCB, and multiple vias to dissipate heat to the other side of the board. A 2-3 oz copper thickness is recommended.
  • To ensure proper biasing, follow the recommended voltage and current ratings in the datasheet. Use a stable voltage source, and consider adding a voltage regulator to maintain a consistent voltage supply. Also, ensure the input and output pins are properly terminated to prevent ringing and oscillations.
  • To minimize EMI and RFI, use a shielded enclosure, and ensure the PCB layout is designed to minimize radiation. Use a common-mode choke or ferrite bead on the input and output lines, and consider adding EMI filters or shielding to the device. Also, follow good PCB design practices, such as keeping signal traces short and away from the edges of the board.
  • To troubleshoot issues, start by checking the device's thermal performance using an infrared thermometer or thermal imaging camera. Verify that the device is properly biased and the input and output pins are properly terminated. Check for any signs of physical damage, such as cracks or corrosion. Use a oscilloscope to analyze the input and output waveforms, and consult the datasheet and application notes for guidance.
  • Recommended test equipment includes a high-speed oscilloscope (e.g., 1 GHz bandwidth), a signal generator, and a DC power supply. A thermal camera or infrared thermometer can be used to monitor the device's temperature. Additionally, a spectrum analyzer can be used to measure the device's frequency response and noise performance.

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FDMS7570S Overview

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Part Image FDMS7570S Fairchild Semiconductor Corporation

Power Field-Effect Transistor, 28A I(D), 25V, 0.00195ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA