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FDMS7650 - onsemi

Description: N-Channel PowerTrench® MOSFET 30V, 267A, 0.99mΩ

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FDMS7650 Details

  • Manufacturer Part Number:

    FDMS7650

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    PQFN-8

  • Package Description:

    ROHS COMPLIANT, POWER 56, 8 PIN

  • Manufacturer Package Code:

    483AE

  • Country Of Origin:

    Malaysia

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    24 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    5.15

  • Avalanche Energy Rating (Eas):

    544 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    30 V

  • Drain Current-Max (ID):

    36 A

  • Drain-source On Resistance-Max:

    0.99 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PDSO-F5

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    5

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    104 W

  • Pulsed Drain Current-Max (IDM):

    450 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

FDMS7650 Frequently Asked Questions (FAQs)

  • A 4-layer PCB with a dedicated thermal layer and a thermal via array under the device is recommended. This layout helps to dissipate heat efficiently and reduces thermal resistance.
  • Implement a robust thermal management system, including a heat sink and thermal interface material. Ensure good airflow and avoid thermal hotspots. Monitor the device's junction temperature and adjust the system design accordingly.
  • Consider the heat sink's thermal resistance, material, and surface finish. A heat sink with a low thermal resistance (e.g., < 1°C/W) and a rough surface finish (e.g., black anodized) is recommended. Ensure the heat sink is compatible with the device's package and thermal interface material.
  • Use a gate drive circuit with a low output impedance and a fast rise/fall time (e.g., < 10 ns). Ensure the gate drive voltage is within the recommended range (e.g., 10-15 V). Use a gate resistor with a value between 10-50 ohms to optimize switching performance.
  • Use a common-mode choke and a differential-mode filter to reduce EMI. Implement a shielded enclosure and ensure good grounding practices. Keep sensitive components and cables away from the power stage. Use a layout that minimizes loop areas and reduces radiation.

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FDMS7650 Overview

Use the download button to access the FDMS7650 3D model. You can still request or build the schematic symbol and PCB footprint by using the respective build or request forms on this page.
To find more CAD model downloads similar to this part, try a partial part number search, like FDMS7, or try a keyword search, such as Power Field-Effect Transistors

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