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FDMS7660AS - onsemi

Description: Max rDS(on) = 2.6 mΩ at VGS = 7 V, ID = 23 A ; RoHS Compliant ; Advanced Package and Silicon combination for low rDS(on) and high efficiency ; SyncFET Schottky Body Diode ; 100% UIL tested ; MSL1 robust package design ; Max rDS(on) = 2.4 mΩ at VGS = 10 V, ID = 25 A

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PCB Footprints
FDMS7660AS - onsemi PCB footprint - Other - Other - PQFN8 5X6, 1.27P CASE 483AE ISSUE A
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3D Models
FDMS7660AS - onsemi  - 3D model - Other - PQFN8 5X6, 1.27P CASE 483AE ISSUE A
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FDMS7660AS Details

  • Manufacturer Part Number:

    FDMS7660AS

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    PQFN-8

  • Package Description:

    ROHS COMPLIANT, POWER 56, 8 PIN

  • Manufacturer Package Code:

    483AE

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    128 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    30 V

  • Drain Current-Max (ID):

    26 A

  • Drain-source On Resistance-Max:

    0.0024 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    MO-240AA

  • JESD-30 Code:

    R-PDSO-F5

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    5

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    83 W

  • Pulsed Drain Current-Max (IDM):

    150 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

FDMS7660AS Frequently Asked Questions (FAQs)

  • A 4-layer PCB with a solid ground plane and thermal vias is recommended. The device should be placed near a thermal pad or heat sink to dissipate heat efficiently.
  • Ensure proper heat sinking, use a thermal interface material, and follow the recommended PCB layout guidelines. Also, consider derating the device's power handling at high temperatures.
  • The maximum allowable voltage on the enable pin is VCC + 0.3V, but it's recommended to keep it within VCC to ensure reliable operation.
  • Yes, but ensure that the device is properly bypassed and decoupled, and that the PCB layout is optimized for high-frequency operation. Also, consider the device's switching losses and thermal performance.
  • Use a TVS diode or a zener diode to clamp the voltage, and consider adding a series resistor to limit the current. Also, ensure that the device is properly bypassed and decoupled.

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FDMS7660AS Overview

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Part Image FDMS7660AS Fairchild Semiconductor Corporation

Power Field-Effect Transistor, 26A I(D), 30V, 0.0024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA