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FDMS7672 - onsemi

Description: Advanced Package and Silicon design for low rDS(on) and high efficiency ; 100% UIL tested ; Max rDS(on) = 6.9 mΩ at VGS = 4.5 V, ID = 15 A ; MSL1 robust package design ; Enhanced body diode, engineered for soft recovery, provides superior performance in synchronous buck converter applications ; RoHS Compliant ; Max rDS(on) = 5.0 mΩat VGS = 10 V, ID = 19 A

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PCB Footprints
FDMS7672 - onsemi PCB footprint - Other - Other - PQFN8 5X6, 1.27P CASE 483AE ISSUE A
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FDMS7672 Details

  • Manufacturer Part Number:

    FDMS7672

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    PQFN-8

  • Package Description:

    ROHS COMPLIANT, POWER 56, 8 PIN

  • Manufacturer Package Code:

    483AE

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    72 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    30 V

  • Drain Current-Max (ID):

    19 A

  • Drain-source On Resistance-Max:

    0.005 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    MO-240AA

  • JESD-30 Code:

    R-PDSO-N5

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    5

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    48 W

  • Pulsed Drain Current-Max (IDM):

    90 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    NO LEAD

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

FDMS7672 Frequently Asked Questions (FAQs)

  • A 2-layer or 4-layer PCB with a solid ground plane and thermal vias is recommended. Ensure a minimum of 1 oz copper thickness and a thermal relief pattern under the device.
  • Implement a robust thermal management system, including a heat sink, thermal interface material, and a cooling fan. Ensure the device is soldered correctly and the PCB is designed for good thermal conductivity.
  • The maximum allowed voltage on the VIN pin is 36V, but it's recommended to keep it below 30V for reliable operation and to prevent damage to the internal voltage regulator.
  • Use the EN pin to disable the device when not in use, and ensure the VIN pin is connected to a low-ESR capacitor. Also, minimize the number of external components and use a low-IQ voltage regulator if necessary.
  • A 10uF to 22uF X5R or X7R ceramic capacitor with a voltage rating of 50V or higher is recommended. The capacitor should be placed as close to the VIN pin as possible.

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FDMS7672 Overview

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Part Image FDMS7672 Fairchild Semiconductor Corporation

Power Field-Effect Transistor, 19A I(D), 30V, 0.005ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA