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FDMS86180 - onsemi

Description: 50% Lower Qrr than Other MOSFET Suppliers; 100% UIL Tested ; Shielded Gate MOSFET Technology ; Max rDS(on) = 3.2 mΩ at VGS = 10 V, ID = 67 A ; MSL1 Robust Package Design ; Max rDS(on) = 7.9 mΩ at VGS = 6 V, ID = 33 A ; RoHS Compliant ; Lowers Switching Noise/EMI

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PCB Footprints
FDMS86180 - onsemi PCB footprint - Other - Other - FDMS86180-2
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3D Models
FDMS86180 - onsemi  - 3D model - Other - FDMS86180-2
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FDMS86180 Details

  • Manufacturer Part Number:

    FDMS86180

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    PQFN-8

  • Manufacturer Package Code:

    483AF

  • Country Of Origin:

    Philippines

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    10 Weeks

  • Date Of Intro:

    2017-02-03

  • Manufacturer:

    onsemi

  • YTEOL:

    5.9

  • Avalanche Energy Rating (Eas):

    486 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    100 V

  • Drain Current-Max (ID):

    151 A

  • Drain-source On Resistance-Max:

    0.0032 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    55 pF

  • JEDEC-95 Code:

    MO-240AA

  • JESD-30 Code:

    R-PDSO-N5

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    5

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    138 W

  • Pulsed Drain Current-Max (IDM):

    775 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    NO LEAD

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Max (toff):

    62 ns

  • Turn-on Time-Max (ton):

    61 ns

FDMS86180 Frequently Asked Questions (FAQs)

  • A 4-layer PCB with a solid ground plane and a separate power plane is recommended. Keep the high-current paths short and use a common grounding point for the device. Use a shielded inductor and keep the switching node away from sensitive analog circuits.
  • Use the onsemi compensation tool or a similar design tool to optimize the compensation network. The tool will provide the recommended values for the compensation components based on the specific application requirements.
  • The maximum allowed voltage on the VIN pin is 28V, but it's recommended to keep it below 24V to ensure reliable operation and to prevent damage to the device.
  • Yes, the FDMS86180 can be used in a synchronous rectification topology. However, it requires additional external components and a more complex control circuitry to ensure proper operation.
  • Monitor the device's junction temperature, input voltage, and output current to ensure they are within the specified limits. Use thermal monitoring and overcurrent protection to prevent damage to the device.

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FDMS86180 Overview

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