Description:100% UIL tested ; MSL1 robust package design ; Next generation enhanced body diode technology, engineered for soft recovery ; Max rDS(on) = 2.4 mΩ at VGS = 4.5 V, ID = 25 A ; RoHS Compliant ; Advanced Package and Silicon combination for low rDS(on) and high efficiency ; Max rDS(on) = 2.0 mΩ at VGS = 10 V, ID = 28 A
A good PCB layout for the FDMS8820 involves keeping the high-frequency switching nodes (e.g., SW and VIN) away from sensitive analog nodes, using a solid ground plane, and minimizing trace lengths and loops. A 4-layer PCB with a dedicated power plane and a solid ground plane is recommended.
Optimizing the compensation network for the FDMS8820 involves selecting the right values for the compensation components (Rcomp, Ccomp, and Rfb) based on the specific application requirements. A good starting point is to use the recommended values in the datasheet and then adjust them based on the desired transient response and stability margin.
The maximum allowed voltage on the EN pin of the FDMS8820 is 6V. Exceeding this voltage may damage the device. It's recommended to use a voltage divider or a level shifter to ensure the EN pin voltage remains within the specified range.
Yes, the FDMS8820 can be used in a synchronous rectification configuration. However, this requires careful design and layout considerations to ensure proper operation and minimize losses. It's recommended to consult the application note and onsemi's support team for guidance on implementing synchronous rectification with the FDMS8820.
The thermal derating curve for the FDMS8820 is not explicitly provided in the datasheet. However, onsemi's application note AN5163 provides guidance on thermal design and derating for the FDMS8820. It's recommended to consult this application note for detailed information on thermal derating.
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FDMS8820 Overview
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