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FDMT1D3N08B - onsemi

Description: Low Profile 8x8mm MLP Package ; MSL1 Robust Package Design ; Next Generation Enhanced Body Diode Technology, Engineered for Soft Recovery ; 100% UIL Tested ; Max rDS(on) = 1.35 mΩ at VGS = 10 V, ID = 36 A ; Max rDS(on) = 1.8 mΩ at VGS = 8 V, ID = 31 A ; RoHS Compliant ; Advanced Package and Silicon Combination for Low rDS(on)and High Efficiency

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PCB Footprints
FDMT1D3N08B - onsemi PCB footprint - Other - Other - PQFN8 8X8, 2P CASE 483AQ ISSUE B
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3D Models
FDMT1D3N08B - onsemi  - 3D model - Other - PQFN8 8X8, 2P CASE 483AQ ISSUE B
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FDMT1D3N08B Details

  • Manufacturer Part Number:

    FDMT1D3N08B

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    PQFN-8

  • Manufacturer Package Code:

    483AQ

  • Country Of Origin:

    Philippines

  • ECCN Code:

    EAR99

  • Date Of Intro:

    2017-01-27

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    1734 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    80 V

  • Drain Current-Max (ID):

    164 A

  • Drain-source On Resistance-Max:

    0.00135 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    150 pF

  • JESD-30 Code:

    S-PDSO-N3

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    SQUARE

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    178 W

  • Pulsed Drain Current-Max (IDM):

    864 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    NO LEAD

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Max (toff):

    141 ns

  • Turn-on Time-Max (ton):

    191 ns

FDMT1D3N08B Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for FDMT1D3N08B is -55°C to 150°C.
  • To ensure reliability, it's essential to follow the recommended derating curves for voltage and current, and to consider the thermal management of the device and the overall system.
  • Yes, FDMT1D3N08B can be used in switching applications, but it's crucial to consider the device's switching characteristics, such as turn-on and turn-off times, and to ensure that the device is properly driven and biased.
  • To protect FDMT1D3N08B from ESD, follow proper handling and storage procedures, use ESD-protective packaging and materials, and consider implementing ESD protection circuits in the system design.
  • The recommended PCB layout and thermal management for FDMT1D3N08B involve using a thermal pad, placing the device on a thick copper layer, and ensuring good thermal conductivity to the surrounding environment.

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FDMT1D3N08B Overview

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