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FDP050AN06A0 - onsemi

Description: Low Qrr Body Diode; RDS(on) = 4.3mΩ (Typ.) @ VGS = 10V, ID = 80A; QG(tot) = 61nC (Typ.) @ VGS = 10V; UIS Capability (Single Pulse and Repetitive Pulse); Low Miller Charge

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PCB Footprints
FDP050AN06A0 - onsemi PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-220, Molded, 3-Lead, Jedec Variation AB
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3D Models
FDP050AN06A0 - onsemi  - 3D model - Transistor Outline, Vertical - TO-220, Molded, 3-Lead, Jedec Variation AB
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FDP050AN06A0 Details

  • Manufacturer Part Number:

    FDP050AN06A0

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    TO-220-3

  • Package Description:

    TO-220AB, 3 PIN

  • Manufacturer Package Code:

    340AT

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    10 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    5.1

  • Avalanche Energy Rating (Eas):

    470 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    60 V

  • Drain Current-Max (ID):

    18 A

  • Drain-source On Resistance-Max:

    0.005 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    245 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    MATTE TIN

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

FDP050AN06A0 Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the FDP050AN06A0 is -55°C to 150°C.
  • To ensure proper biasing, the FDP050AN06A0 requires a gate-source voltage (Vgs) between 2V and 10V, and a drain-source voltage (Vds) between 1V and 60V.
  • For optimal thermal performance, it is recommended to use a PCB with a thermal pad and a heat sink. The device should be placed on a copper plane with a minimum size of 1 inch x 1 inch, and the thermal pad should be connected to a heat sink with a thermal interface material.
  • To protect the FDP050AN06A0 from ESD, it is recommended to handle the device in an ESD-controlled environment, use ESD-protective packaging, and follow proper handling and storage procedures.
  • The recommended soldering conditions for the FDP050AN06A0 are a peak temperature of 260°C, a dwell time of 10-30 seconds, and a soldering iron temperature of 350°C.

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FDP050AN06A0 Overview

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Part Image FDP050AN06A0_NL Rochester Electronics LLC

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Part Image FDP050AN06A0 Fairchild Semiconductor Corporation

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Part Image FDP050AN06A0_NL Fairchild Semiconductor Corporation

Power Field-Effect Transistor, 18A I(D), 60V, 0.005ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB