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FDP053N08B-F102 - onsemi

Description: • RDS(on) = 4.2 mΩ (Typ.) @ VGS = 10 V, ID = 75 A • Low FOM RDS(on) * QG • Low Reverse-Recovery Charge, Qrr = 62.5 nC • Soft Reverse-Recovery Body Diode • Enables High Efficiency in Synchronous Rectification • Fast Switching Speed • 100% UIL Tested • RoHS Compliant

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PCB Footprints
FDP053N08B-F102 - onsemi PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-220, Molded, 3-Lead, Jedec Variation AB (Delta)
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FDP053N08B-F102 - onsemi  - 3D model - Transistor Outline, Vertical - TO-220, Molded, 3-Lead, Jedec Variation AB (Delta)
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FDP053N08B-F102 Details

  • Manufacturer Part Number:

    FDP053N08B-F102

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    TO-220 3L

  • Package Description:

    ROHS COMPLIANT, PLASTIC PACKAGE-3

  • Manufacturer Package Code:

    221A

  • Reach Compliance Code:

    Not Compliant

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    5.3

  • Avalanche Energy Rating (Eas):

    365 mJ

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    80 V

  • Drain Current-Max (ID):

    75 A

  • Drain-source On Resistance-Max:

    0.0053 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    146 W

  • Pulsed Drain Current-Max (IDM):

    480 A

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

FDP053N08B-F102 Frequently Asked Questions (FAQs)

  • The maximum junction temperature that the FDP053N08B-F102 can withstand is 150°C, as specified in the datasheet. However, it's recommended to operate the device at a lower temperature to ensure reliability and longevity.
  • To ensure proper cooling, it's essential to provide a heat sink with a thermal resistance of less than 10°C/W. Additionally, ensure good airflow around the device, and consider using a thermal interface material to improve heat transfer between the device and heat sink.
  • The recommended gate drive voltage for the FDP053N08B-F102 is between 10V and 15V. This ensures proper switching and minimizes the risk of damage to the device.
  • Yes, the FDP053N08B-F102 is suitable for high-frequency switching applications up to 100 kHz. However, it's essential to consider the device's switching losses, gate drive requirements, and thermal management to ensure reliable operation.
  • To protect the FDP053N08B-F102 from overvoltage and overcurrent, consider using a voltage clamp or a transient voltage suppressor (TVS) to limit voltage spikes. Additionally, implement overcurrent protection using a fuse or a current sense resistor to detect and respond to excessive current.

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FDP053N08B-F102 Overview

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