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FDP070AN06A0 - onsemi

Description: RDS(on) = 6.1 mΩ (Typ.) @ VGS = 10 V, ID = 80 A; UIS Capability (Single Pulse and Repetitive Pulse); Low Miller Charge; Low Qrr Body Diode; Qg(tot) = 51 nC (Typ.) @ VGS = 10 V

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FDP070AN06A0 Details

  • Manufacturer Part Number:

    FDP070AN06A0

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    TO-220-3

  • Package Description:

    TO-220AB, 3 PIN

  • Manufacturer Package Code:

    340AT

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    11 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    5.1

  • Avalanche Energy Rating (Eas):

    190 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    60 V

  • Drain Current-Max (ID):

    15 A

  • Drain-source On Resistance-Max:

    0.007 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    175 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    MATTE TIN

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

FDP070AN06A0 Frequently Asked Questions (FAQs)

  • The maximum SOA for the FDP070AN06A0 is not explicitly stated in the datasheet, but it can be estimated based on the device's thermal and electrical characteristics. A safe operating area can be determined by considering the device's voltage, current, and power ratings, as well as its thermal impedance and maximum junction temperature.
  • To ensure optimal performance, the FDP070AN06A0 should be biased such that the gate-source voltage (Vgs) is within the recommended range (typically -2V to 10V). The drain-source voltage (Vds) should also be within the recommended range (typically up to 60V). Additionally, the device should be operated within its recommended current and power ratings.
  • The recommended PCB layout for the FDP070AN06A0 involves using a solid ground plane, minimizing trace lengths and widths, and using thermal vias to dissipate heat. Thermal management involves using a heat sink or thermal pad to dissipate heat, and ensuring good airflow around the device. The device's thermal impedance and maximum junction temperature should also be considered.
  • To protect the FDP070AN06A0 from ESD, it is recommended to handle the device with anti-static precautions, such as using an anti-static wrist strap or mat. The device should also be stored in an anti-static bag or container. Additionally, the device's pins should be protected from ESD using ESD protection diodes or resistors.
  • The reliability and lifespan expectations for the FDP070AN06A0 depend on various factors, including operating conditions, environmental factors, and manufacturing quality. The device's datasheet provides information on its reliability and lifespan, including its mean time to failure (MTTF) and failure rate. However, actual reliability and lifespan may vary depending on the specific application and operating conditions.

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FDP070AN06A0 Overview

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Part Image FDP070AN06A0 Rochester Electronics LLC

15A, 60V, 0.007ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220AB, 3 PIN