FDP07 Model Download Search Results
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FDP075N15A_F102
onsemi
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1 | MOSFET PowerTrench N-Ch 150V 130A TO220 | Transistor Outline, Vertical | FDP075N15A_F102 |
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FDP075N15A-F102
onsemi
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1 | High Power and Current Handling Capability; Fast Switching; High Performance Trench Technology for Extremely Low RDS(on) ; RDS(on) = 6.25mΩ ( Typ.)@ VGS = 10V, ID = 100A; RoHS Compliant; Low Gate Charge, QG = 77nC ( Typ.) | Transistor Outline, Vertical | FDP075N15A-F102 |
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FDP070AN06A0
Fairchild Semiconductor Corporation
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1 | Power Field-Effect Transistor, 15A I(D), 60V, 0.007ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | FDP070AN06A0 |
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FDP070AN06A0
Rochester Electronics LLC
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1 | 15A, 60V, 0.007ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220AB, 3 PIN | FDP070AN06A0 |
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FDP075N15A_F102
Fairchild Semiconductor Corporation
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1 | Power Field-Effect Transistor, 120A I(D), 150V, 0.0075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | FDP075N15A_F102 |
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FDP070AN06A0
onsemi
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1 | RDS(on) = 6.1 mΩ (Typ.) @ VGS = 10 V, ID = 80 A; UIS Capability (Single Pulse and Repetitive Pulse); Low Miller Charge; Low Qrr Body Diode; Qg(tot) = 51 nC (Typ.) @ VGS = 10 V | FDP070AN06A0 |
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![Part Image](["https://componentsearchengine.com/Images/9/FDP075N15A_F102.jpg",null,null])
![Part Image]([null,null,"//content.supplyframe.com/images/process/fit-in/100x100/p/to220ab_3.jpg"])
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