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FDP120N10 - onsemi

Description: High Performance Trench Technology for Extremely Low RDS(on); High Power and Current Handling Capability; RoHS compliant; Fast Switching Speed; RDS(on) = 9.7 mΩ ( Typ.)@ VGS = 10V, ID = 74A; Low Gate Charge

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PCB Footprints
FDP120N10 - onsemi PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-220, Molded, 3Lead, JEDEC variation AB
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FDP120N10 - onsemi  - 3D model - Transistor Outline, Vertical - TO-220, Molded, 3Lead, JEDEC variation AB
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FDP120N10 Details

  • Manufacturer Part Number:

    FDP120N10

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    TO-220-3

  • Package Description:

    TO-220, 3 PIN

  • Manufacturer Package Code:

    340AT

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    9 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    5

  • Avalanche Energy Rating (Eas):

    198 mJ

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    100 V

  • Drain Current-Max (ID):

    74 A

  • Drain-source On Resistance-Max:

    0.012 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    170 W

  • Pulsed Drain Current-Max (IDM):

    296 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

FDP120N10 Frequently Asked Questions (FAQs)

  • The maximum safe operating area (SOA) for the FDP120N10 is not explicitly stated in the datasheet. However, onsemi provides a SOA graph in the datasheet that shows the maximum drain current and drain-source voltage combinations that the device can handle without damage. Engineers can use this graph to determine the maximum safe operating area for their specific application.
  • The junction-to-case thermal resistance (RθJC) is not directly provided in the datasheet. However, onsemi provides the junction-to-ambient thermal resistance (RθJA) and the case-to-ambient thermal resistance (RθCA) in the datasheet. Engineers can calculate RθJC by subtracting RθCA from RθJA.
  • The recommended gate drive voltage for the FDP120N10 is not explicitly stated in the datasheet. However, a general rule of thumb is to use a gate drive voltage that is at least 2-3 times the threshold voltage (Vth) of the MOSFET. For the FDP120N10, Vth is around 2-4V, so a gate drive voltage of 6-12V is recommended.
  • The FDP120N10 is a power MOSFET designed for low-frequency switching applications. While it can be used in high-frequency switching applications, its performance may not be optimal due to its relatively high gate charge and output capacitance. Engineers should carefully evaluate the device's performance in their specific application and consider using a MOSFET specifically designed for high-frequency switching if necessary.
  • To ensure the FDP120N10 is properly biased for linear operation, engineers should ensure that the gate-source voltage (Vgs) is within the recommended range (typically around 4-10V) and that the drain-source voltage (Vds) is within the recommended range (typically around 10-20V). Additionally, engineers should ensure that the device is operated within its safe operating area (SOA) and that the junction temperature is within the recommended range.

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