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FDP12N60NZ - onsemi

Description: Last Shipments - Power MOSFET, N-Channel, UniFETTM, 400V, 15A, 300mΩ, TO-220

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FDP12N60NZ - onsemi PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - FDP12N60NZ
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FDP12N60NZ - onsemi  - 3D model - Transistor Outline, Vertical - FDP12N60NZ
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FDP12N60NZ Details

  • Manufacturer Part Number:

    FDP12N60NZ

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    TO-220-3

  • Package Description:

    ROHS COMPLIANT PACKAGE-3

  • Manufacturer Package Code:

    340AT

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    2 Days

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    565 mJ

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    600 V

  • Drain Current-Max (ID):

    12 A

  • Drain-source On Resistance-Max:

    0.65 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    240 W

  • Pulsed Drain Current-Max (IDM):

    48 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

FDP12N60NZ Frequently Asked Questions (FAQs)

  • The maximum operating temperature of the FDP12N60NZ is 175°C, as specified in the datasheet.
  • To ensure the FDP12N60NZ is fully turned on, apply a gate-source voltage (Vgs) of at least 10V, and ensure the gate drive circuit can provide sufficient current to charge the gate capacitance quickly.
  • The recommended gate resistor value for the FDP12N60NZ depends on the specific application and gate drive circuit. A typical value is around 10-20 ohms, but it may need to be adjusted based on the specific requirements of the design.
  • Yes, the FDP12N60NZ is suitable for high-frequency switching applications due to its low gate charge and internal gate resistance. However, the maximum switching frequency depends on the specific application and circuit design.
  • To protect the FDP12N60NZ from overvoltage and overcurrent, use a suitable voltage regulator and current limiter in the circuit design. Additionally, consider adding overvoltage protection (OVP) and overcurrent protection (OCP) circuits to prevent damage to the device.

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FDP12N60NZ Overview

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