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FDP2532 - onsemi

Description: Qualified to AEC Q101 Formerly Developmental Type 82884; RDS(ON) = 14mΩ (Typ.), VGS = 10V, ID = 33A; UIS Capability (Single Pulse and Repetitive Pulse); Low Qrr Body Diode; Qg(tot) = 86nC (Typ.), VGS = 10V; Low Miller Charge

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PCB Footprints
FDP2532 - onsemi PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO−220−3LD CASE 340AT ISSUE A_3
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3D Models
FDP2532 - onsemi  - 3D model - Transistor Outline, Vertical - TO−220−3LD CASE 340AT ISSUE A_3
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FDP2532 Details

  • Manufacturer Part Number:

    FDP2532

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    TO-220-3

  • Package Description:

    TO-220AB, 3 PIN

  • Manufacturer Package Code:

    340AT

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    5.92

  • Avalanche Energy Rating (Eas):

    400 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    150 V

  • Drain Current-Max (ID):

    8 A

  • Drain-source On Resistance-Max:

    0.016 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    310 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

FDP2532 Frequently Asked Questions (FAQs)

  • The maximum power dissipation of the FDP2532 is 1.4 W at a junction temperature of 150°C.
  • To ensure proper biasing, connect the gate of the FDP2532 to a voltage source through a resistor, and connect the source to a voltage source or ground through a resistor. The recommended bias voltage is 5V to 15V.
  • The recommended operating frequency range for the FDP2532 is up to 100 kHz, but it can operate up to 1 MHz with reduced performance.
  • Use a voltage regulator to limit the voltage to the recommended maximum of 25V, and add a current-limiting resistor or a fuse to prevent overcurrent.
  • The FDP2532 is designed as a power MOSFET, suitable for switching applications. While it can be used as a linear amplifier, it's not optimized for linear operation and may not provide the best performance.

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FDP2532 Overview

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Part Image FDP2532 Fairchild Semiconductor Corporation

Power Field-Effect Transistor, 8A I(D), 150V, 0.016ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Part Image FDP2532_NL Fairchild Semiconductor Corporation

Power Field-Effect Transistor, 8A I(D), 150V, 0.016ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB