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FDP2D3N10C - onsemi

Description: Max RDS(on) = 2.3 mΩ at VGS = 10 V, ID = 222 A; High Performance Trench Technology for Extremely Low RDS(on); Extremely Low Reverse Recovery Charge, Qrr; Low Gate Charge, QG = 108nC ( Typ.); High Power and Current Handling Capability; 100% UIL Tested; RoHS Compliant

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PCB Footprints
FDP2D3N10C - onsemi PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-220 CASE 221A-09 ISSUE AH
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FDP2D3N10C - onsemi  - 3D model - Transistor Outline, Vertical - TO-220 CASE 221A-09 ISSUE AH
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FDP2D3N10C Details

  • Manufacturer Part Number:

    FDP2D3N10C

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    TO-220-3

  • Manufacturer Package Code:

    221A

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.29.00.95

  • Factory Lead Time:

    14 Weeks

  • Date Of Intro:

    2017-05-12

  • Manufacturer:

    onsemi

  • YTEOL:

    5.3

  • Avalanche Energy Rating (Eas):

    1176 mJ

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    100 V

  • Drain Current-Max (ID):

    120 A

  • Drain-source On Resistance-Max:

    0.0023 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    75 pF

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation Ambient-Max:

    2.4 W

  • Power Dissipation-Max (Abs):

    214 W

  • Pulsed Drain Current-Max (IDM):

    888 A

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Max (toff):

    175 ns

  • Turn-on Time-Max (ton):

    123 ns

FDP2D3N10C Frequently Asked Questions (FAQs)

  • A 2-layer or 4-layer PCB with a thermal relief pattern and a solid ground plane is recommended. Ensure a minimum of 1 oz copper thickness and a thermal via array under the device.
  • Implement a robust thermal management system, including a heat sink, thermal interface material, and a cooling fan. Monitor junction temperature and adjust the system design accordingly.
  • Monitor the device's junction temperature, drain-source voltage, and drain current. Implement over-temperature, over-voltage, and over-current protection mechanisms.
  • Use a dedicated gate driver IC with a high current capability and a low output impedance. Ensure a short gate resistance and a low inductance layout to minimize switching losses.
  • Implement ESD protection diodes on the drain and source pins. Use a TVS (Transient Voltage Suppressor) diode or a zener diode with a suitable voltage rating.

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FDP2D3N10C Overview

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