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FDPF085N10A - onsemi

Description: RoHS Compliant; High Performance Trench Technology for Extremely Low RDS(on); Low Gate Charge, QG = 31nC ( Typ.); Fast Switching Speed; High Power and Current Handling Capability; RDS(on) = 6.5mΩ( Typ.)@ VGS = 10V, ID = 40A

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PCB Footprints
FDPF085N10A - onsemi PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-220 F_2022
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FDPF085N10A - onsemi  - 3D model - Transistor Outline, Vertical - TO-220 F_2022
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FDPF085N10A Details

  • Manufacturer Part Number:

    FDPF085N10A

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    TO-220-3 FullPak

  • Package Description:

    TO-220F (RETRACTABLE), 3 PIN

  • Manufacturer Package Code:

    221AT

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    12 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    5.3

  • Additional Feature:

    ULTRA-LOW RESISTANCE

  • Avalanche Energy Rating (Eas):

    269 mJ

  • Case Connection:

    ISOLATED

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    100 V

  • Drain Current-Max (ID):

    40 A

  • Drain-source On Resistance-Max:

    0.0085 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    33.3 W

  • Pulsed Drain Current-Max (IDM):

    160 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

FDPF085N10A Frequently Asked Questions (FAQs)

  • The maximum junction temperature that the FDPF085N10A can withstand is 150°C. However, it's recommended to operate the device at a junction temperature below 125°C for reliable operation.
  • To ensure the FDPF085N10A is properly biased, make sure to provide a stable input voltage within the recommended range (typically 10-15V), and ensure the gate-source voltage (Vgs) is within the recommended range (typically -2 to 4V) for optimal performance.
  • For optimal thermal management, it's recommended to use a PCB with a thermal pad connected to a heat sink or a thermal interface material. Ensure the PCB layout provides a low-impedance path for the drain and source pins, and use a Kelvin connection for the gate pin to minimize noise and oscillations.
  • Yes, the FDPF085N10A is suitable for high-frequency switching applications up to 1 MHz. However, ensure that the PCB layout and component selection are optimized for high-frequency operation, and consider using a gate driver with a high current capability to minimize switching losses.
  • To protect the FDPF085N10A from overvoltage and overcurrent conditions, use a voltage regulator or a voltage clamp to limit the input voltage, and consider adding overcurrent protection devices such as fuses or current sensors. Additionally, ensure the PCB layout provides a safe operating area (SOA) for the device.

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FDPF085N10A Overview

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