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FDPF18N50 - onsemi

Description: Low Crss ( Typ. 25pF); RDS(on) = 220mΩ ( Typ.)@ VGS = 10V, ID = 9A; Low gate charge ( Typ. 45nC); 100% avalanche tested

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PCB Footprints
FDPF18N50 - onsemi PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO−220 Fullpack, 3−Lead / TO−220F−3SG CASE 221AT ISSUE A
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3D Models
FDPF18N50 - onsemi  - 3D model - Transistor Outline, Vertical - TO−220 Fullpack, 3−Lead / TO−220F−3SG CASE 221AT ISSUE A
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  • Datasheet Download Datasheet
  • Stock & Prices $ Price & Stock for FDPF18N50
  • Part Number FDPF18N50
  • Manufacturer onsemi
  • Pin Count 3
  • Part Category MOSFET (N-Channel)
  • Package Category Transistor Outline, Vertical
  • Footprint Name Transistor Outline, Vertical - TO−220 Fullpack, 3−Lead / TO−220F−3SG CASE 221AT ISSUE A
  • Released Date Dec 31, 2020
  • Last Modified Date Jan 22, 2025 4:53 PM UTC
  • Pinout / Pin List Click Here (Member Only)

FDPF18N50 Details

  • Manufacturer Part Number:

    FDPF18N50

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    TO-220-3 FullPak

  • Package Description:

    TO-220F, 3 PIN

  • Manufacturer Package Code:

    221AT

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    5.95

  • Additional Feature:

    FAST SWITCHING

  • Avalanche Energy Rating (Eas):

    945 mJ

  • Case Connection:

    ISOLATED

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    500 V

  • Drain Current-Max (ID):

    18 A

  • Drain-source On Resistance-Max:

    0.265 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    38.5 W

  • Pulsed Drain Current-Max (IDM):

    72 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

FDPF18N50 Frequently Asked Questions (FAQs)

  • The maximum junction temperature of the FDPF18N50 is 175°C. However, it's recommended to keep the junction temperature below 150°C for reliable operation.
  • The thermal resistance of the FDPF18N50 can be calculated using the thermal resistance junction-to-case (RθJC) and junction-to-ambient (RθJA) values provided in the datasheet. The thermal resistance junction-to-case (RθJC) is 1.5°C/W, and the thermal resistance junction-to-ambient (RθJA) is 60°C/W.
  • The recommended gate resistor value for the FDPF18N50 is between 10Ω to 100Ω. However, the optimal value depends on the specific application and switching frequency. A higher gate resistor value can reduce the switching speed, while a lower value can increase the switching speed but may cause oscillations.
  • Yes, the FDPF18N50 is suitable for high-frequency switching applications up to 100 kHz. However, it's essential to consider the device's switching characteristics, such as the rise and fall times, and ensure that the gate drive circuit is designed to minimize switching losses.
  • To protect the FDPF18N50 from overvoltage and overcurrent, it's recommended to use a voltage clamp or a transient voltage suppressor (TVS) to limit the voltage across the device. Additionally, a current sense resistor and a fuse can be used to detect and respond to overcurrent conditions.

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