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FDPF20N50FT - onsemi

Description: 100% avalanche tested; Low gate charge ( Typ. 50nC); RDS(on) = 210mΩ ( Typ.)@ VGS = 10V, ID = 10A; RoHS compliant; Improved dv/dt capability; Low Crss ( Typ. 27pF)

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PCB Footprints
FDPF20N50FT - onsemi PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO−220F
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3D Models
FDPF20N50FT - onsemi  - 3D model - Transistor Outline, Vertical - TO−220F
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FDPF20N50FT Details

  • Manufacturer Part Number:

    FDPF20N50FT

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    TO-220-3 FullPak

  • Package Description:

    TO-220F, 3 PIN

  • Manufacturer Package Code:

    221AT

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    61 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    5.95

  • Avalanche Energy Rating (Eas):

    1110 mJ

  • Case Connection:

    ISOLATED

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    500 V

  • Drain Current-Max (ID):

    20 A

  • Drain-source On Resistance-Max:

    0.26 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    38.5 W

  • Pulsed Drain Current-Max (IDM):

    80 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

FDPF20N50FT Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the FDPF20N50FT is -55°C to 150°C.
  • To ensure proper biasing, the FDPF20N50FT requires a gate-source voltage (Vgs) between 2V and 10V, and a drain-source voltage (Vds) not exceeding 500V.
  • The recommended gate resistor value for the FDPF20N50FT is between 1kΩ and 10kΩ, depending on the specific application and switching frequency.
  • Yes, the FDPF20N50FT is suitable for high-frequency switching applications up to 1MHz, but the user should ensure proper PCB layout and decoupling to minimize parasitic inductance and capacitance.
  • To protect the FDPF20N50FT, use a voltage clamp or a transient voltage suppressor (TVS) to limit voltage spikes, and consider adding a current sense resistor and a fuse or a current limiter to prevent overcurrent conditions.

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FDPF20N50FT Overview

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Part Image FDP20N50F onsemi

Power Field-Effect Transistor, 20A I(D), 500V, 0.26ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB