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FDPF20N50T - onsemi

Description: 100% avalanche tested; Low gate charge ( Typ. 45.6nC); Low Crss ( Typ. 27pF); RDS(on) = 200mΩ ( Typ.)@ VGS = 10V, ID = 10A

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FDPF20N50T - onsemi PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-220-3LD
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FDPF20N50T - onsemi  - 3D model - Transistor Outline, Vertical - TO-220-3LD
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FDPF20N50T Details

  • Manufacturer Part Number:

    FDPF20N50T

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    TO-220-3 FullPak

  • Package Description:

    TO-220, 3 PIN

  • Manufacturer Package Code:

    221AT

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    5.95

  • Avalanche Energy Rating (Eas):

    1110 mJ

  • Case Connection:

    ISOLATED

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    500 V

  • Drain Current-Max (ID):

    20 A

  • Drain-source On Resistance-Max:

    0.23 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    38.5 W

  • Pulsed Drain Current-Max (IDM):

    80 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

FDPF20N50T Frequently Asked Questions (FAQs)

  • The maximum junction temperature that the FDPF20N50T can withstand is 175°C, as specified in the datasheet. However, it's recommended to keep the junction temperature below 150°C for reliable operation.
  • To ensure proper cooling, a heat sink with a thermal resistance of less than 10°C/W is recommended. Additionally, ensure good thermal contact between the device and heat sink, and provide adequate airflow around the heat sink.
  • The recommended gate resistor value for the FDPF20N50T is between 10Ω to 100Ω, depending on the specific application and switching frequency. A higher gate resistor value can help reduce electromagnetic interference (EMI) but may increase switching losses.
  • Yes, the FDPF20N50T is suitable for high-reliability applications. It is manufactured using a robust process and has undergone rigorous testing to ensure its reliability. However, it's essential to follow proper design and assembly guidelines to ensure the device operates within its specified parameters.
  • To protect the FDPF20N50T from ESD, handle the device by the body or use an anti-static wrist strap or mat. Ensure that the device is stored in an anti-static bag or tube, and avoid touching the device's pins or leads.

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FDPF20N50T Overview

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