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FDPF2D3N10C - onsemi

Description: Max RDS(on) = 2.3 mΩ at VGS = 10 V, ID = 222 A; High Performance Trench Technology for Extremely Low RDS(on); Extremely Low Reverse Recovery Charge, Qrr; Low Gate Charge, QG = 108nC ( Typ.); High Power and Current Handling Capability; 100% UIL Tested; RoHS Compliant

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FDPF2D3N10C - onsemi PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - FDPF2D3N10C
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FDPF2D3N10C - onsemi  - 3D model - Transistor Outline, Vertical - FDPF2D3N10C
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FDPF2D3N10C Details

  • Manufacturer Part Number:

    FDPF2D3N10C

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    TO-220-3 FullPak

  • Manufacturer Package Code:

    221AT

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.29.00.95

  • Factory Lead Time:

    12 Weeks

  • Date Of Intro:

    2017-05-12

  • Manufacturer:

    onsemi

  • YTEOL:

    5.3

  • Avalanche Energy Rating (Eas):

    1176 mJ

  • Case Connection:

    ISOLATED

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    100 V

  • Drain Current-Max (ID):

    120 A

  • Drain-source On Resistance-Max:

    0.0023 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    75 pF

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation Ambient-Max:

    2.4 W

  • Power Dissipation-Max (Abs):

    45 W

  • Pulsed Drain Current-Max (IDM):

    888 A

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Max (toff):

    175 ns

  • Turn-on Time-Max (ton):

    123 ns

FDPF2D3N10C Frequently Asked Questions (FAQs)

  • The SOA is not explicitly stated in the datasheet, but it can be estimated based on the device's thermal and electrical characteristics. A safe operating area can be determined by considering the device's voltage, current, and power dissipation ratings.
  • Proper thermal management involves providing a heat sink with a low thermal resistance, ensuring good thermal contact between the device and heat sink, and keeping the ambient temperature within the recommended range. A thermal interface material (TIM) can also be used to improve heat transfer.
  • The recommended gate drive voltage is typically between 4.5V and 10V, with a maximum gate-source voltage of ±20V. However, the optimal gate drive voltage may vary depending on the specific application and switching frequency.
  • To minimize EMI, use a layout with short leads, a low-inductance path for the drain-source current, and a decoupling capacitor between the gate and source. Additionally, consider using a shielded cable or a ferrite bead to reduce radiated emissions.
  • The maximum allowed Vds is 100V, as specified in the datasheet. Exceeding this voltage can lead to device damage or failure.

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