Part Image

FDPF51N25RDTU - onsemi

Description: Power MOSFET, N-Channel, UniFETTM, 250 V, 51 A, 60 mΩ, TO-220F

Download FDPF51N25RDTU Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
3D Models
FDPF51N25RDTU - onsemi  - 3D model
click to zoom
Note! To download footprints and symbols, use the build and request forms below

Build

Launch Build Wizard
Build Wizard not available for this package category!

Request (48 hours)

FDPF51N25RDTU Details

  • Manufacturer Part Number:

    FDPF51N25RDTU

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    TO-220-3

  • Package Description:

    TO-220, 3 PIN

  • Manufacturer Package Code:

    340BL

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    1111 mJ

  • Case Connection:

    ISOLATED

  • Configuration:

    SINGLE

  • DS Breakdown Voltage-Min:

    250 V

  • Drain Current-Max (ID):

    51 A

  • Drain-source On Resistance-Max:

    0.06 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    90 pF

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    38 W

  • Pulsed Drain Current-Max (IDM):

    204 A

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Max (toff):

    475 ns

  • Turn-on Time-Max (ton):

    1075 ns

FDPF51N25RDTU Frequently Asked Questions (FAQs)

  • The maximum junction temperature that the FDPF51N25RDTU can withstand is 175°C.
  • To ensure proper cooling, a heat sink with a thermal resistance of less than 10°C/W is recommended. Additionally, ensure good airflow around the device and avoid blocking the heat sink fins.
  • The recommended gate drive voltage for the FDPF51N25RDTU is between 10V and 15V, with a maximum of 20V.
  • Yes, the FDPF51N25RDTU is suitable for high-frequency switching applications up to 100 kHz. However, ensure that the device is properly cooled and the gate drive voltage is optimized for the specific application.
  • Use a voltage clamp or a transient voltage suppressor (TVS) to protect the FDPF51N25RDTU from overvoltage. Additionally, use a current sense resistor and a fuse or a current limiter to protect the device from overcurrent.

Trust Checks

No trust score is available for this model.
Trust Score Unavailable
Sponsored

FDPF51N25RDTU Overview

Use the download button to access the FDPF51N25RDTU 3D model. You can still request or build the schematic symbol and PCB footprint by using the respective build or request forms on this page.
To find more CAD model downloads similar to this part, try a partial part number search, like FDPF5, or try a keyword search, such as Power Field-Effect Transistors

Parts related to FDPF51N25RDTU

Showing 0 results

Select Package Category

Package Categories

Datasheet PDF Preview