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FDPF7N60NZ - onsemi

Description: Obsolete - Power MOSFET, N-Channel, UniFETTM II, 600 V, 6.5 A, 1.25 Ω, TO-220F

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FDPF7N60NZ - onsemi - PCB symbol
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FDPF7N60NZ - onsemi PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - FDPF7N60NZ
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FDPF7N60NZ - onsemi - 3D model - Transistor Outline, Vertical - FDPF7N60NZ
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FDPF7N60NZ Details

  • Manufacturer Part Number:

    FDPF7N60NZ

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    TO-220-3 FullPak

  • Package Description:

    TO-220F, 3 PIN

  • Manufacturer Package Code:

    221AT

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    4 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    275 mJ

  • Case Connection:

    ISOLATED

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    600 V

  • Drain Current-Max (ID):

    6.5 A

  • Drain-source On Resistance-Max:

    1.25 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    33 W

  • Pulsed Drain Current-Max (IDM):

    26 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

FDPF7N60NZ Frequently Asked Questions (FAQs)

  • The recommended gate resistor value for FDPF7N60NZ is typically in the range of 10-22 ohms, depending on the specific application and switching frequency.
  • To ensure reliable operation of FDPF7N60NZ in high-temperature environments, it is recommended to derate the power dissipation according to the temperature derating curve provided in the datasheet, and to ensure good thermal management through proper heat sinking and cooling.
  • The maximum allowed voltage transient for FDPF7N60NZ is typically 650V, but it's recommended to limit the voltage transient to 600V or less to ensure reliable operation and to prevent damage to the device.
  • Yes, FDPF7N60NZ can be used in a half-bridge configuration, but it's recommended to ensure that the device is properly biased and that the gate-source voltage is within the recommended range to prevent unwanted turn-on or oscillations.
  • To prevent shoot-through current in FDPF7N60NZ-based designs, it's recommended to use a dead-time control circuit or a dedicated shoot-through protection circuit, and to ensure that the gate-source voltage is properly controlled during switching transitions.

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FDPF7N60NZ Overview

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FDPF7N60NZ Alternates

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Part Image FDPF7N60NZT onsemi

Power Field-Effect Transistor, 6.5A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET