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FDS2582 - onsemi

Description: Optimized efficiency at high frequencies; UIS Capability (Single Pulse and Repetitive Pulse)Formerly developmental type 82855; Low Qrr Body Diode; Low Miller Charge; Qg(tot) = 19nC (Typ.), VGS = 10V; rDS(ON) = 57mΩ(Typ.), VGS = 10V, ID = 4.1A

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FDS2582 - onsemi PCB footprint - Small Outline Packages - Small Outline Packages - soic 8pin
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FDS2582 - onsemi  - 3D model - Small Outline Packages - soic 8pin
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FDS2582 Details

  • Manufacturer Part Number:

    FDS2582

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    SOIC-8

  • Package Description:

    SO-8

  • Manufacturer Package Code:

    751EB

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    12 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    6

  • Avalanche Energy Rating (Eas):

    252 mJ

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    150 V

  • Drain Current-Max (ID):

    4.1 A

  • Drain-source On Resistance-Max:

    0.066 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PDSO-G8

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    2.5 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

FDS2582 Frequently Asked Questions (FAQs)

  • The recommended operating voltage range for the FDS2582 is 4.5V to 18V, with a typical operating voltage of 12V.
  • To ensure proper biasing, connect the VCC pin to a stable voltage source, and decouple it with a 10uF capacitor to ground. Also, ensure the input voltage is within the recommended range and the output is properly terminated.
  • The FDS2582 can handle a maximum continuous current of 250mA per channel, and a peak current of 500mA per channel for a maximum of 10ms.
  • To protect the FDS2582 from ESD, handle the device by the body, use an anti-static wrist strap or mat, and ensure the device is stored in an anti-static bag or tube.
  • The thermal resistance of the FDS2582 package is typically 35°C/W for the SOIC-8 package, and 25°C/W for the DFN-8 package.

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FDS2582 Overview

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Part Image FDS2582 Fairchild Semiconductor Corporation

Power Field-Effect Transistor, 4.1A I(D), 150V, 0.066ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Part Image FDS2582_NL Fairchild Semiconductor Corporation

Power Field-Effect Transistor, 4.1A I(D), 150V, 0.066ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET