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FDS2672 - onsemi

Description: RoHS compliant; Max rDS(on) = 70mΩ at VGS = 10V, ID = 3.9A; High performance trench technology for extremely low rDS(on) ; Max rDS(on) = 80mΩ at VGS = 6V, ID = 3.5A; Fast switching speed

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FDS2672 - onsemi PCB footprint - Small Outline Packages - Small Outline Packages - SO 8L NB (SOIC)
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FDS2672 - onsemi  - 3D model - Small Outline Packages - SO 8L NB (SOIC)
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FDS2672 Details

  • Manufacturer Part Number:

    FDS2672

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    SOIC-8

  • Manufacturer Package Code:

    751EB

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    10 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    5.97

  • Avalanche Energy Rating (Eas):

    37.5 mJ

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    200 V

  • Drain Current-Max (ID):

    3.9 A

  • Drain-source On Resistance-Max:

    0.148 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PDSO-G8

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    2.5 W

  • Pulsed Drain Current-Max (IDM):

    50 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Element Material:

    SILICON

FDS2672 Frequently Asked Questions (FAQs)

  • The FDS2672 can operate from -40°C to 150°C, making it suitable for high-reliability applications.
  • The FDS2672 requires a bias voltage of 5V to 15V, and the recommended bias current is 1mA to 10mA. Ensure the bias voltage is stable and noise-free for optimal performance.
  • Use a multi-layer PCB with a solid ground plane, and keep the FDS2672 away from high-frequency signals. Use short, direct traces for the bias voltage and keep the input and output traces separate to minimize crosstalk.
  • Use a voltage regulator to limit the voltage to the recommended range. Add ESD protection diodes and a TVS (Transient Voltage Suppressor) to protect the FDS2672 from voltage spikes and ESD events.
  • Store the FDS2672 in a dry, cool place, away from direct sunlight and moisture. Handle the device by the body, not the leads, to prevent damage. Use anti-static packaging and follow proper ESD handling procedures.

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FDS2672 Overview

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Part Image FDS2672 Fairchild Semiconductor Corporation

Power Field-Effect Transistor, 3.9A I(D), 200V, 0.148ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET