Part Image

FDS3992 - onsemi

Description: rDS(ON) = 54mΩ(Typ.), VGS = 10V, ID = 4.5A ; Low Miller Charge ; Optimized efficiency at high frequencies ; Qg(tot) = 11nC (Typ.), VGS = 10V ; Formerly developmental type 82745 ; UIS Capability (Single Pulse and Repetitive Pulse) ; Low Qrr Body Diode

Download FDS3992 Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
PCB Footprints
FDS3992 - onsemi PCB footprint - Small Outline Packages - Small Outline Packages - FDS3992FDS3992
click to zoom
3D Models
FDS3992 - onsemi  - 3D model - Small Outline Packages - FDS3992FDS3992
click to zoom

FDS3992 Details

  • Manufacturer Part Number:

    FDS3992

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    SOIC-8

  • Package Description:

    SO-8

  • Manufacturer Package Code:

    751EB

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    11 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    5.75

  • Avalanche Energy Rating (Eas):

    167 mJ

  • Configuration:

    SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    100 V

  • Drain Current-Max (ID):

    4.5 A

  • Drain-source On Resistance-Max:

    0.062 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PDSO-G8

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    2

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    2.5 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

FDS3992 Frequently Asked Questions (FAQs)

  • A 2-layer or 4-layer PCB with a solid ground plane and thermal vias is recommended. Keep the thermal pad connected to the ground plane to improve heat dissipation.
  • Ensure the input voltage is within the recommended range (4.5V to 5.5V) and the output voltage is set to the desired level (e.g., 3.3V or 1.8V). Also, ensure the input and output capacitors are properly sized and placed close to the device.
  • The maximum current rating for the FDS3992 is 2A. However, it's recommended to derate the current to 1.5A for optimal reliability and thermal performance.
  • The thermal shutdown feature is enabled by default. If the junction temperature exceeds 150°C, the device will shut down. To handle this, ensure proper thermal design, use a heat sink if necessary, and monitor the device temperature using the thermal monitoring pin (TMON).
  • A 10uF to 22uF ceramic capacitor (X5R or X7R dielectric) is recommended for the input capacitor. Place it as close to the VIN pin as possible to minimize noise and ripple.

Trust Checks

This model has been built in collaboration with the manufacturer.
Manufacturer Collaborated
This model has been verified by system checks.
System Verified
This model has been reviewed by community users.
Community Approved
Sponsored

FDS3992 Overview

Use the download button to access the FDS3992 schematic symbol, PCB footprint, and 3D model.
To find more CAD model downloads similar to this part, try a partial part number search, like FDS39, or try a keyword search, such as Power Field-Effect Transistors

Parts related to FDS3992

Showing 0 results

FDS3992 Alternates

Showing results

Image Part Number Model
Part Image FDS3992_NL Fairchild Semiconductor Corporation

Power Field-Effect Transistor, 4.5A I(D), 100V, 0.062ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET