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FDS4435BZ - onsemi

Description: High performance trench technology for extremely low rDS(on); Max rDS(on) = 35mΩ at VGS = –4.5V, ID = –6.7A; High power and current handling capability ; Termination is Lead–free and RoHS compliant; Max rDS(on) = 20mΩ at VGS = –10V, ID = –8.8A; HBM ESD protection level of ±3.8KV typical (note 3) ; Extended VGSS range (–25V) for battery applications

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FDS4435BZ - onsemi PCB footprint - Small Outline Packages - Small Outline Packages - SOIC8 CASE 751EB ISSUE A
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FDS4435BZ - onsemi  - 3D model - Small Outline Packages - SOIC8 CASE 751EB ISSUE A
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FDS4435BZ Details

  • Manufacturer Part Number:

    FDS4435BZ

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    SOIC-8

  • Package Description:

    SOP-8

  • Manufacturer Package Code:

    751EB

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    12 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    7.07

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    30 V

  • Drain Current-Max (ID):

    8.8 A

  • Drain-source On Resistance-Max:

    0.02 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    345 pF

  • JESD-30 Code:

    R-PDSO-G8

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    P-CHANNEL

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

FDS4435BZ Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the FDS4435BZ is -40°C to 150°C.
  • To ensure proper biasing, connect the gate of the FDS4435BZ to a voltage source through a resistor, and connect the source to a voltage source or ground through a resistor. The recommended biasing voltage is typically around 10-15V.
  • The maximum current rating for the FDS4435BZ is 4.5A.
  • To protect the FDS4435BZ from ESD, handle the device by the body or use an anti-static wrist strap, and store the device in an anti-static bag or container.
  • The recommended PCB layout for the FDS4435BZ involves placing the device near the power source, using a solid ground plane, and minimizing trace lengths and widths to reduce parasitic inductance and capacitance.

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FDS4435BZ Overview

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