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FDS4465 - onsemi

Description: -13.5 A, -20 V. ; RDS(on) = 8.5mΩ @ VGS = - 4.5V ; RDS(on) = 10.5mΩ @ VGS = - 2.5V ; High performance trench technology for extremelylow RDS(ON); Fast switching speed; High current and power handling capability; RDS(on) = 14mΩ @ VGS = - 1.8V

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FDS4465 - onsemi PCB footprint - Small Outline Packages - Small Outline Packages - SOIC8 CASE 751EB ISSUE A
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FDS4465 - onsemi  - 3D model - Small Outline Packages - SOIC8 CASE 751EB ISSUE A
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FDS4465 Details

  • Manufacturer Part Number:

    FDS4465

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    SOIC-8

  • Package Description:

    SOIC-8

  • Manufacturer Package Code:

    751EB

  • Reach Compliance Code:

    Compliant

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    15 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    5.3

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    20 V

  • Drain Current-Max (ID):

    13.5 A

  • Drain-source On Resistance-Max:

    0.0085 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    750 pF

  • JEDEC-95 Code:

    MS-012AA

  • JESD-30 Code:

    R-PDSO-G8

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    P-CHANNEL

  • Power Dissipation-Max (Abs):

    2.5 W

  • Pulsed Drain Current-Max (IDM):

    50 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Max (toff):

    704 ns

  • Turn-on Time-Max (ton):

    74 ns

FDS4465 Frequently Asked Questions (FAQs)

  • The FDS4465 can operate up to 100 MHz, but the maximum frequency is dependent on the specific application and layout.
  • To minimize EMI, keep the layout as compact as possible, use a solid ground plane, and keep the high-frequency signals away from the analog signals. Also, use a common mode choke or a ferrite bead to filter the output.
  • The recommended input capacitance is 10nF to 100nF, but the optimal value depends on the specific application and input voltage.
  • The FDS4465 is rated for operation up to 125°C, but the maximum junction temperature should not exceed 150°C. Ensure proper thermal design and heat sinking to prevent overheating.
  • Use a voltage regulator or a TVS diode to protect against overvoltage, and add a current-limiting resistor or a fuse to prevent overcurrent. Also, ensure the PCB layout is designed to handle the maximum current rating.

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