Part Image

FDS4470 - onsemi

Description: High performance trench technology for extremelylow RDS(ON); 12.5 A, 40 V. RDS(ON) = 9 mΩ @ VGS = 10 V; High power and current handling capability; Low gate charge (45 nC)

Download FDS4470 Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
PCB Footprints
FDS4470 - onsemi PCB footprint - Small Outline Packages - Small Outline Packages - SOIC8-1
click to zoom
3D Models
FDS4470 - onsemi  - 3D model - Small Outline Packages - SOIC8-1
click to zoom

FDS4470 Details

  • Manufacturer Part Number:

    FDS4470

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    SOIC-8

  • Package Description:

    SO-8

  • Manufacturer Package Code:

    751EB

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    370 mJ

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    40 V

  • Drain Current-Max (ID):

    12.5 A

  • Drain-source On Resistance-Max:

    0.009 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PDSO-G8

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    1.2 W

  • Pulsed Drain Current-Max (IDM):

    50 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

FDS4470 Frequently Asked Questions (FAQs)

  • The FDS4470 can operate up to 100 MHz, but the maximum frequency is dependent on the specific application and layout.
  • To minimize EMI, keep the layout as compact as possible, use a solid ground plane, and keep the input and output traces separate. Also, use a common mode choke or ferrite bead to filter the output.
  • The recommended input capacitance is 10nF to 100nF, but the optimal value depends on the specific application and input voltage.
  • The FDS4470 is rated for operation up to 125°C, but the maximum junction temperature is 150°C. Ensure proper thermal design and heat sinking to prevent overheating.
  • Use a voltage regulator or overvoltage protection circuit to prevent voltage exceeding the maximum rating. Also, add a current limiting resistor or fuse to prevent overcurrent.

Trust Checks

This model has been built in collaboration with the manufacturer.
Manufacturer Collaborated
This model has been verified by system checks.
System Verified
This model has been reviewed by community users.
Community Approved
Sponsored

FDS4470 Overview

Use the download button to access the FDS4470 schematic symbol, PCB footprint, and 3D model.
To find more CAD model downloads similar to this part, try a partial part number search, like FDS44, or try a keyword search, such as Power Field-Effect Transistors

Parts related to FDS4470

Showing 0 results

FDS4470 Alternates

Showing results

Image Part Number Model
Part Image FDS4470 Fairchild Semiconductor Corporation

Power Field-Effect Transistor, 12.5A I(D), 40V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET