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FDS4935BZ - onsemi

Description: High power and current handling capability; RDS(ON) = 22 mΩ @ VGS = –10 V; ESD protection diode (note 3) ; –6.9 A, –30 V; High performance trench technology for extremelylow RDS(ON); Extended VGSS range (–25V) for battery applications; RDS(ON) = 35 m @ VGS = – 4.5 V

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FDS4935BZ - onsemi - PCB symbol
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FDS4935BZ - onsemi PCB footprint - Small Outline Packages - Small Outline Packages - SO
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FDS4935BZ - onsemi - 3D model - Small Outline Packages - SO
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FDS4935BZ Details

  • Manufacturer Part Number:

    FDS4935BZ

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    SOIC-8

  • Package Description:

    SOP-8

  • Manufacturer Package Code:

    751EB

  • Country Of Origin:

    Philippines

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    7.07

  • Additional Feature:

    ESD PROTECTION

  • Configuration:

    SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    30 V

  • Drain Current-Max (ID):

    6.9 A

  • Drain-source On Resistance-Max:

    0.022 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PDSO-G8

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    2

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    P-CHANNEL

  • Power Dissipation-Max (Abs):

    1.6 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

FDS4935BZ Frequently Asked Questions (FAQs)

  • A 2-layer or 4-layer PCB with a solid ground plane and thermal vias under the device can help to dissipate heat efficiently. The datasheet provides a recommended PCB layout, but it's essential to consult with a thermal expert or perform thermal simulations to ensure optimal performance.
  • The FDS4935BZ requires a specific biasing scheme to operate within its recommended operating conditions. Ensure that the gate-source voltage (Vgs) is within the recommended range (typically -2V to 2V) and the drain-source voltage (Vds) is within the recommended range (typically 10V to 30V). Consult the datasheet for specific biasing requirements.
  • Monitor the device's junction temperature (Tj), drain-source voltage (Vds), and drain current (Id) to prevent overheating. The datasheet provides thermal resistance values and thermal derating curves to help estimate the device's temperature. Use thermal monitoring ICs or thermistors to monitor the device's temperature.
  • Use ESD protection devices, such as TVS diodes or ESD arrays, on the input and output pins to protect the FDS4935BZ from ESD events. Ensure that the PCB design includes ESD protection and follow proper handling and storage procedures to prevent ESD damage.
  • Use a reflow soldering process with a peak temperature of 260°C (500°F) for a maximum of 10 seconds. Ensure that the PCB is designed with a solder mask and that the device is handled and stored in an ESD-protected environment.

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FDS4935BZ Overview

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FDS4935BZ Alternates

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Part Image FDS4935BZ Fairchild Semiconductor Corporation

Power Field-Effect Transistor, 6.9A I(D), 30V, 0.022ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET