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FDS6294 - onsemi

Description: Obsolete - 30V N-Channel Fast Switching PowerTrench MOSFET

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FDS6294 - onsemi PCB footprint - Small Outline Packages - Small Outline Packages - SOIC8 CASE 751EB ISSUE A
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FDS6294 - onsemi  - 3D model - Small Outline Packages - SOIC8 CASE 751EB ISSUE A
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FDS6294 Details

  • Manufacturer Part Number:

    FDS6294

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    SOIC-8

  • Package Description:

    SO-8

  • Manufacturer Package Code:

    751EB

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    4 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    30 V

  • Drain Current-Max (ID):

    13 A

  • Drain-source On Resistance-Max:

    0.0113 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PDSO-G8

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    3 W

  • Pulsed Drain Current-Max (IDM):

    50 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    MATTE TIN

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

FDS6294 Frequently Asked Questions (FAQs)

  • The FDS6294 can operate from -40°C to 150°C, making it suitable for high-reliability applications.
  • To ensure proper biasing, connect the gate to a voltage source through a resistor (e.g., 1 kΩ) and the source to ground. This sets the gate-source voltage (Vgs) to the recommended 4.5 V to 5.5 V range.
  • To minimize parasitic inductance, use a compact PCB layout with short, wide traces. Place the FDS6294 close to the power source and use a solid ground plane. Avoid using vias under the device, and keep the drain and source pins as close as possible.
  • To protect the FDS6294 from ESD, handle the device with an anti-static wrist strap or mat. Use ESD-sensitive packaging and storage materials. When handling the device, touch a grounded object or wear an anti-static wrist strap to discharge static electricity.
  • The maximum allowable power dissipation for the FDS6294 is 2.5 W. Ensure that the device is properly heat-sinked and the ambient temperature is within the recommended range to prevent overheating.

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FDS6294 Overview

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Part Image FDS6294 Fairchild Semiconductor Corporation

Power Field-Effect Transistor, 13A I(D), 30V, 0.0113ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Part Image FDS6294_NL Fairchild Semiconductor Corporation

Power Field-Effect Transistor, 13A I(D), 30V, 0.0113ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET