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FDS8449 - onsemi

Description: 7.6 A, 40 V ; RDS(on) = 36 mΩ @ VGS = 4.5 V ; High power handling capability in a widely usedsurface mount package ; RDS(on) = 29 mΩ @ VGS = 10 V ; RoHS compliant

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FDS8449 - onsemi PCB footprint - Small Outline Packages - Small Outline Packages - SOIC8-5
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FDS8449 Details

  • Manufacturer Part Number:

    FDS8449

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    SOIC-8

  • Package Description:

    SOIC-8

  • Manufacturer Package Code:

    751EB

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    27 mJ

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    40 V

  • Drain Current-Max (ID):

    7.6 A

  • Drain-source On Resistance-Max:

    0.029 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    60 pF

  • JEDEC-95 Code:

    MS-012AA

  • JESD-30 Code:

    R-PDSO-G8

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    2.5 W

  • Pulsed Drain Current-Max (IDM):

    50 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Max (toff):

    23 ns

  • Turn-on Time-Max (ton):

    28 ns

FDS8449 Frequently Asked Questions (FAQs)

  • The FDS8449 can operate from -40°C to 150°C, making it suitable for high-reliability applications.
  • To ensure proper biasing, connect the gate of the FDS8449 to a voltage source through a resistor, and connect the source to a voltage source or ground through a resistor. Refer to the application note for specific biasing configurations.
  • To minimize parasitic inductance, use a compact PCB layout with short, wide traces. Place the FDS8449 close to the power source, and use a solid ground plane to reduce inductance. Avoid using vias under the device, and keep the drain and source pins as close as possible.
  • To protect the FDS8449 from ESD, handle the device in an ESD-controlled environment, use ESD-protective packaging, and ensure that all equipment and tools are properly grounded. Avoid touching the device pins or handling the device during assembly.
  • The recommended gate drive voltage for the FDS8449 is between 4.5V and 15V, with a typical value of 10V. However, the optimal gate drive voltage may vary depending on the specific application and operating conditions.

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Part Image FDS8449 Fairchild Semiconductor Corporation

Small Signal Field-Effect Transistor, 7.6A I(D), 40V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, SO-8