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FDS8896 - onsemi

Description: RDS(ON) = 7.3 mΩ @ VGS = 4.5V @ ID = 14A ; High power and current handling capability ; High performance trench technology for extremely lowrDS(ON) ; Low gate charge ; RDS(ON) = 6.0 mΩ @ VGS = 10V @ ID = 15A ; RoHS Compliant

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FDS8896 Details

  • Manufacturer Part Number:

    FDS8896

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Not Recommended

  • Part Package Code:

    SOIC-8

  • Package Description:

    SO-8

  • Manufacturer Package Code:

    751EB

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.29.00.95

  • Factory Lead Time:

    14 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    3

  • Avalanche Energy Rating (Eas):

    196 mJ

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    30 V

  • Drain Current-Max (ID):

    15 A

  • Drain-source On Resistance-Max:

    0.006 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    300 pF

  • JESD-30 Code:

    R-PDSO-G8

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation Ambient-Max:

    2.5 W

  • Power Dissipation-Max (Abs):

    2.5 W

  • Pulsed Drain Current-Max (IDM):

    110 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Max (toff):

    126 ns

  • Turn-on Time-Max (ton):

    68 ns

FDS8896 Frequently Asked Questions (FAQs)

  • A good PCB layout for FDS8896 involves keeping the high-current paths short and wide, using a solid ground plane, and placing the device close to the power source. Additionally, it's recommended to use a shielded inductor and to keep the switching node (SW) away from sensitive analog circuits.
  • To optimize FDS8896 for low standby power consumption, ensure that the EN pin is properly biased to turn off the device when not in use. Also, use a low-ESR output capacitor and optimize the inductor value to minimize switching losses. Furthermore, consider using a low-voltage, low-power mode for the controller IC.
  • The maximum allowed voltage on the VIN pin of FDS8896 is 28V. Exceeding this voltage may damage the device. It's recommended to use a voltage regulator or a voltage limiter to ensure the input voltage remains within the specified range.
  • To troubleshoot FDS8896 oscillations or instability issues, check the PCB layout for any signs of resonance or noise coupling. Ensure that the output capacitor is properly sized and that the inductor value is correct. Also, verify that the feedback loop is properly compensated and that the device is not overheating.
  • FDS8896 is rated for operation up to 150°C junction temperature. However, the device's performance and reliability may degrade at high temperatures. It's recommended to use a heat sink or a thermal management system to keep the device temperature within the specified range.

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FDS8896 Overview

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Part Image FDS8896_NL Fairchild Semiconductor Corporation

Power Field-Effect Transistor, 15A I(D), 30V, 0.006ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET