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FDS9953A - onsemi

Description: Obsolete - Dual P-Channel PowerTrench MOSFET -60V, -2.9A, 105mΩ

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FDS9953A - onsemi PCB footprint - Small Outline Packages - Small Outline Packages - --SOIC8 CASE 751EB ISSUE A
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FDS9953A - onsemi  - 3D model - Small Outline Packages - --SOIC8 CASE 751EB ISSUE A
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FDS9953A Details

  • Manufacturer Part Number:

    FDS9953A

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    SOIC-8

  • Package Description:

    SO-8

  • Manufacturer Package Code:

    751EB

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Configuration:

    SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    30 V

  • Drain Current-Max (ID):

    2.9 A

  • Drain-source On Resistance-Max:

    0.13 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PDSO-G8

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    2

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    P-CHANNEL

  • Power Dissipation-Max (Abs):

    2 W

  • Pulsed Drain Current-Max (IDM):

    10 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    MATTE TIN

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

FDS9953A Frequently Asked Questions (FAQs)

  • A 2-layer or 4-layer PCB with a solid ground plane and thermal vias is recommended. The device should be placed near a thermal pad or heat sink to dissipate heat efficiently.
  • The device requires a stable 5V supply voltage and a bias current of 10mA to 20mA. Ensure the input voltage is within the recommended range and the bias current is set correctly to achieve optimal performance.
  • The maximum operating frequency of the FDS9953A is 100 MHz. However, the actual operating frequency may vary depending on the specific application and PCB layout.
  • The FDS9953A has built-in ESD protection, but additional external protection may be necessary depending on the application. Follow proper ESD handling procedures during assembly and handling to prevent damage.
  • The recommended storage temperature range for the FDS9953A is -40°C to 125°C. Storage outside this range may affect device reliability and performance.

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FDS9953A Overview

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Part Image FDS9953A Fairchild Semiconductor Corporation

Power Field-Effect Transistor, 2.9A I(D), 30V, 0.13ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET