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FDT1600N10ALZ - onsemi

Description: High Performance Trench Technology for Extremely Low RDS(on); RoHS Compliant; High Power and Current Handling Capability; Low Gate Charge ( Typ.2.9nC); RDS(on) = 121 mΩ ( Typ.)@ VGS = 10 V, ID = 2.8 A; RDS(on) = 156 mΩ ( Typ.)@ VGS = 5 V, ID = 1.8 A; Fast Switching Speed

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PCB Footprints
FDT1600N10ALZ - onsemi PCB footprint - Other - Other - FDT1600N10ALZ-2
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FDT1600N10ALZ - onsemi  - 3D model - Other - FDT1600N10ALZ-2
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FDT1600N10ALZ Details

  • Manufacturer Part Number:

    FDT1600N10ALZ

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    SOT-223-4 / TO-261-4

  • Package Description:

    ROHS COMPLIANT PACKAGE-4

  • Manufacturer Package Code:

    318H-01

  • Country Of Origin:

    Philippines

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    5.6

  • Avalanche Energy Rating (Eas):

    9.2 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    100 V

  • Drain Current-Max (ID):

    5.6 A

  • Drain-source On Resistance-Max:

    0.16 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PDSO-G4

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    4

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    10.42 W

  • Pulsed Drain Current-Max (IDM):

    22.4 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

FDT1600N10ALZ Frequently Asked Questions (FAQs)

  • The maximum operating junction temperature for the FDT1600N10ALZ is 150°C.
  • To ensure proper biasing, the FDT1600N10ALZ requires a gate-source voltage (Vgs) between 2V and 5V, and a drain-source voltage (Vds) not exceeding 100V.
  • For optimal thermal performance, it is recommended to use a multi-layer PCB with a thermal relief pattern, and to ensure good thermal conductivity between the device and the heat sink or PCB.
  • To protect the FDT1600N10ALZ from ESD, it is recommended to handle the device in an ESD-controlled environment, use ESD-protective packaging, and ensure that all equipment and tools are properly grounded.
  • The recommended soldering conditions for the FDT1600N10ALZ are a peak temperature of 260°C, with a soldering time of 10 seconds or less.

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FDT1600N10ALZ Overview

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