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FDT86256 - onsemi

Description: Very low Qg and Qgd compared to competing trench technologies ; Max rDS(on) = 845 mΩ at VGS = 10 V, ID = 1.2 A ; Max rDS(on) = 1280 mΩ at VGS = 6.0 V, ID = 1.0 A ; Fast switching speed ; 100% UIL Tested ; RoHS Compliant

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PCB Footprints
FDT86256 - onsemi PCB footprint - SOT223 (3-Pin) - SOT223 (3-Pin) - FQT2P25TF
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3D Models
FDT86256 - onsemi  - 3D model - SOT223 (3-Pin) - FQT2P25TF
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FDT86256 Details

  • Manufacturer Part Number:

    FDT86256

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    SOT-223-4 / TO-261-4

  • Package Description:

    ROHS COMPLIANT PACKAGE-4

  • Manufacturer Package Code:

    318H-01

  • Country Of Origin:

    Philippines

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    4 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    1 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    150 V

  • Drain Current-Max (ID):

    1.2 A

  • Drain-source On Resistance-Max:

    0.845 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PDSO-G4

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    4

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    10 W

  • Pulsed Drain Current-Max (IDM):

    2 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

FDT86256 Frequently Asked Questions (FAQs)

  • A good PCB layout for the FDT86256 involves keeping the high-current paths short and wide, using a solid ground plane, and placing the device close to the power source. Additionally, it's recommended to use a shielded inductor and to keep the switching node (SW) away from sensitive analog circuits.
  • To optimize the compensation network for the FDT86256, start by selecting the recommended component values from the datasheet. Then, use a network analyzer or a simulation tool to fine-tune the values based on the specific application's requirements and PCB layout. It's also important to consider the output capacitor's ESR and the inductor's DCR when selecting the compensation components.
  • The maximum allowed voltage on the EN pin of the FDT86256 is 6V. Exceeding this voltage may damage the device. It's recommended to use a voltage divider or a level shifter if the enable signal is coming from a higher voltage domain.
  • Yes, the FDT86256 can be used in a synchronous rectification configuration. However, it's essential to ensure that the device is properly configured and the external MOSFETs are selected based on the specific application's requirements. Additionally, the PCB layout and thermal management become critical in this configuration.
  • To troubleshoot the FDT86256, start by verifying the input voltage, enable signal, and clock signal. Check the output voltage and current to ensure they are within the specified range. Use an oscilloscope to inspect the switching node (SW) and the output voltage. If the issue persists, check the PCB layout, component values, and thermal management.

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FDT86256 Overview

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