FDT86 Model Download Search Results
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FDT86246L
onsemi
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1 | Max rDS(on) = 280 mΩ at VGS = 4.5 V, ID = 1.8 A ; Max rDS(on) = 228 mΩ at VGS = 10 V, ID = 2 A ; Fast switching speed ; High performance trench technology for extremely low rDS(on) ; 100% UIL Tested ; High power and current handling capability in a widely usedsurface mount package ; RoHS Compliant | SOT223 (3-Pin) | FDT86246L |
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FDT86113LZ
onsemi
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1 | RoHS Compliant; 100% UIL tested; Max rDS(on) = 145 mΩ at VGS = 4.5 V, ID = 2.7 A; HBM ESD protection level > 3 KV typical (Note 4); High power and current handling capability in a widely usedsurface mount package; Max rDS(on) = 100 mΩ at VGS = 10 V, ID = 3.3 A; High performance trench technology for extremely low rDS(on) | SOT223 (3-Pin) | FDT86113LZ |
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FDT86106LZ
onsemi
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1 | HBM ESD protection level > 3 KV typical (Note 4); Max rDS(on) = 108 mΩ at VGS = 10 V, ID = 3.2 A; Max rDS(on) = 153 mΩ at VGS = 4.5 V, ID = 2.7 A; High power and current handling capability in a widely usedsurface mount package; 100% UIL tested; RoHS Compliant; High performance trench technology for extremely low rDS(on) | SOT223 (3-Pin) | FDT86106LZ |
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FDT86246
onsemi
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1 | Max rDS(on) = 236 mΩ at VGS = 10 V, ID = 2 A; Max rDS(on) = 329 mΩ at VGS = 6 V, ID = 1.7 A; RoHS Compliant; Fast switching speed; 100% UIL Tested; High performance trench technology for extremely low rDS(on); High power and current handling capability in a widely used surface mount package | SOT223 (3-Pin) | FDT86246 |
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FDT86102LZ
onsemi
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1 | N-Channel PowerTrench® MOSFET 100V, 6.6A, 28mΩ | Other | FDT86102LZ |
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FDT86256
onsemi
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1 | Very low Qg and Qgd compared to competing trench technologies ; Max rDS(on) = 845 mΩ at VGS = 10 V, ID = 1.2 A ; Max rDS(on) = 1280 mΩ at VGS = 6.0 V, ID = 1.0 A ; Fast switching speed ; 100% UIL Tested ; RoHS Compliant | SOT223 (3-Pin) | FDT86256 |
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FDT86244
onsemi
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1 | High performance trench technology for extremely low rDS(on); High power and current handling capability in a widely used surface mount package; Max rDS(on) = 128 mΩ at VGS = 10 V, ID = 2.8 A; 100% UIL Tested; Fast switching speed; Max rDS(on) = 178 mΩ at VGS = 6 V, ID = 2.4 A; RoHS Compliant | SOT223 (3-Pin) | FDT86244 |
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FDT86113LZ
Fairchild Semiconductor Corporation
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1 | Small Signal Field-Effect Transistor, 3.3A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | FDT86113LZ |
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FDT86102LZ
Fairchild Semiconductor Corporation
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1 | Small Signal Field-Effect Transistor, 6.6A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | FDT86102LZ |
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FDT86256
Fairchild Semiconductor Corporation
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1 | Power Field-Effect Transistor, 1.2A I(D), 150V, 0.845ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | FDT86256 |
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FDT86106LZ
Fairchild Semiconductor Corporation
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1 | Power Field-Effect Transistor, 3.2A I(D), 100V, 0.108ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | FDT86106LZ |
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FDT86246L
Fairchild Semiconductor Corporation
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1 | Small Signal Field-Effect Transistor | FDT86246L |
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FDT86246
Fairchild Semiconductor Corporation
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1 | Small Signal Field-Effect Transistor, 2A I(D), 150V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | FDT86246 |
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FDT86244
Fairchild Semiconductor Corporation
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1 | Small Signal Field-Effect Transistor, 2.8A I(D), 150V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | FDT86244 |
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FDT86113LZ
Rochester Electronics LLC
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1 | 3300mA, 100V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, ROHS COMPLIANT PACKAGE-4 | FDT86113LZ |
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