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FDT86246 - onsemi

Description: Max rDS(on) = 236 mΩ at VGS = 10 V, ID = 2 A; Max rDS(on) = 329 mΩ at VGS = 6 V, ID = 1.7 A; RoHS Compliant; Fast switching speed; 100% UIL Tested; High performance trench technology for extremely low rDS(on); High power and current handling capability in a widely used surface mount package

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PCB Footprints
FDT86246 - onsemi PCB footprint - SOT223 (3-Pin) - SOT223 (3-Pin) - SOT-223 CASE 318H
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3D Models
FDT86246 - onsemi  - 3D model - SOT223 (3-Pin) - SOT-223 CASE 318H
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FDT86246 Details

  • Manufacturer Part Number:

    FDT86246

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    SOT-223-4 / TO-261-4

  • Package Description:

    ROHS COMPLIANT PACKAGE-4

  • Manufacturer Package Code:

    318H-01

  • Country Of Origin:

    Philippines

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    8 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    6.9

  • Additional Feature:

    ULTRA-LOW RESISTANCE

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    150 V

  • Drain Current-Max (ID):

    2 A

  • Drain-source On Resistance-Max:

    0.236 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    5 pF

  • JESD-30 Code:

    R-PDSO-G4

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    4

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    2.2 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

FDT86246 Frequently Asked Questions (FAQs)

  • A 2-layer or 4-layer PCB with a solid ground plane and thermal vias is recommended. Ensure a minimum of 1 oz copper thickness and a thermal relief pattern under the device.
  • Ensure a stable 5V supply voltage, and decouple the device with a 10uF capacitor. Use a 1kΩ resistor to bias the gate of the internal MOSFET. Refer to the application note for a detailed biasing circuit.
  • The maximum SOA is defined by the voltage and current ratings. Ensure the device operates within the specified voltage range (–2V to 28V) and current limit (2A). Refer to the datasheet for the SOA graph.
  • Handle the device by the body, not the leads. Use an ESD wrist strap or mat, and ensure the workspace is ESD-protected. Store the device in an anti-static bag or tube.
  • Use a reflow soldering profile with a peak temperature of 260°C (500°F) for 20-30 seconds. Ensure the device is soldered within the recommended temperature range (220°C to 240°C) to prevent damage.

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FDT86246 Overview

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