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FDT86246L - onsemi

Description: Max rDS(on) = 280 mΩ at VGS = 4.5 V, ID = 1.8 A ; Max rDS(on) = 228 mΩ at VGS = 10 V, ID = 2 A ; Fast switching speed ; High performance trench technology for extremely low rDS(on) ; 100% UIL Tested ; High power and current handling capability in a widely usedsurface mount package ; RoHS Compliant

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PCB Footprints
FDT86246L - onsemi PCB footprint - SOT223 (3-Pin) - SOT223 (3-Pin) - BSP50
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3D Models
FDT86246L - onsemi  - 3D model - SOT223 (3-Pin) - BSP50
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FDT86246L Details

  • Manufacturer Part Number:

    FDT86246L

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    SOT-223-4 / TO-261-4

  • Package Description:

    TO-261C, SOT-223, 4 PIN

  • Manufacturer Package Code:

    318H-01

  • Country Of Origin:

    Philippines

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    6.9

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    150 V

  • Drain Current-Max (ID):

    2 A

  • Drain-source On Resistance-Max:

    0.228 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    5 pF

  • JEDEC-95 Code:

    TO-261AA

  • JESD-30 Code:

    R-PDSO-G4

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    4

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    2.2 W

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

FDT86246L Frequently Asked Questions (FAQs)

  • A 2-layer or 4-layer PCB with a solid ground plane and thermal vias is recommended. The device should be placed near a thermal pad or heat sink to dissipate heat efficiently.
  • The device requires a stable input voltage (VIN) and a proper bias voltage (VBIAS) to operate correctly. Ensure VIN is within the recommended range (4.5V to 5.5V) and VBIAS is set to 2.5V ± 0.1V.
  • The FDT86246L can handle a maximum continuous current of 2A per channel, with a peak current of 4A for 10ms. Exceeding these limits may cause device damage or degradation.
  • Use ESD protection diodes and TVS diodes on the input and output pins to protect against electrostatic discharge and overvoltage events. Ensure the device is also protected from voltage spikes and surges.
  • The FDT86246L is rated for operation from -40°C to 125°C. Operating the device outside this range may affect its performance, reliability, or lifespan.

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FDT86246L Overview

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