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FDWS86369_F085 - onsemi

Description: MV7 N Channel Power Trench MosFET

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FDWS86369_F085 - onsemi  - 3D model
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FDWS86369_F085 Details

  • Manufacturer Part Number:

    FDWS86369_F085

  • Brand Name:

    ON Semiconductor

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    SMALL OUTLINE, R-PDSO-F5

  • Reach Compliance Code:

    Compliant

  • Country Of Origin:

    Philippines

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    5.9

  • Avalanche Energy Rating (Eas):

    27 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    80 V

  • Drain Current-Max (ID):

    65 A

  • Drain-source On Resistance-Max:

    0.0075 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    14 pF

  • JESD-30 Code:

    R-PDSO-F8

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    107 W

  • Reference Standard:

    AEC-Q101

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Max (toff):

    48 ns

  • Turn-on Time-Max (ton):

    39 ns

FDWS86369_F085 Frequently Asked Questions (FAQs)

  • A 2-layer or 4-layer PCB with a solid ground plane and thermal vias is recommended. Ensure a minimum of 1 oz copper thickness and a thermal relief pattern under the device.
  • Implement a robust thermal management system, including a heat sink and thermal interface material. Ensure proper PCB design, and consider using a thermistor or thermocouple for temperature monitoring.
  • Monitor the device's temperature, current, and voltage. Implement over-temperature protection (OTP), over-current protection (OCP), and under-voltage lockout (UVLO) to prevent damage and ensure safe operation.
  • Use a dedicated gate driver IC or a high-current, low-impedance gate drive circuit. Ensure a low-inductance layout, and consider using a gate resistor to dampen ringing and oscillations.
  • Follow standard ESD handling procedures, including the use of ESD-safe workstations, wrist straps, and packaging materials. Implement ESD protection circuits, such as TVS diodes or ESD arrays, on the PCB.

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FDWS86369_F085 Overview

Use the download button to access the FDWS86369_F085 3D model. You can still request or build the schematic symbol and PCB footprint by using the respective build or request forms on this page.
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Part Image FDWS86369-F085 onsemi

N-Channel PowerTrench® MOSFET 80V, 65A, 7.5mΩ, DFNW-8, 3000-REEL, Automotive Qualified