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FDWS9509L-F085 - onsemi

Description: Typical RDS(on) = 6.3 mΩ at VGS = -10V, ID = -65 A; Typical Qg(tot) = 48 nC at VGS = -10V, ID = -65 A; UIS Capability; RoHS Compliant; Qualified to AEC Q101; Wettable flanks for automatic optical inspection (AOI)

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FDWS9509L-F085 - onsemi PCB footprint - Other - Other - FDWS9510L-F085-2
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FDWS9509L-F085 - onsemi  - 3D model - Other - FDWS9510L-F085-2
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FDWS9509L-F085 Details

  • Manufacturer Part Number:

    FDWS9509L-F085

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Not Recommended

  • Part Package Code:

    DFNW-8

  • Package Description:

    DFN-8

  • Manufacturer Package Code:

    507AU

  • Country Of Origin:

    Philippines

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    4 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    3

  • Avalanche Energy Rating (Eas):

    84 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    40 V

  • Drain Current-Max (ID):

    65 A

  • Drain-source On Resistance-Max:

    0.0153 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    MO-240AA

  • JESD-30 Code:

    R-PDSO-F5

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    5

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    P-CHANNEL

  • Power Dissipation-Max (Abs):

    107 W

  • Reference Standard:

    AEC-Q101

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Max (toff):

    405 ns

  • Turn-on Time-Max (ton):

    22 ns

FDWS9509L-F085 Frequently Asked Questions (FAQs)

  • A 2-layer or 4-layer PCB with a solid ground plane and thermal vias is recommended. Ensure a minimum of 1 oz copper thickness and a thermal relief pattern under the device.
  • Implement a robust thermal management system, including a heat sink, thermal interface material, and a cooling fan if necessary. Monitor junction temperature and adjust the system design accordingly.
  • Monitor output voltage, current, and temperature. Implement over-voltage protection (OVP), under-voltage protection (UVP), and over-temperature protection (OTP) to prevent damage and ensure safe operation.
  • Use a shielded enclosure, keep sensitive components away from the FDWS9509L-F085, and implement a common-mode choke or EMI filter to reduce emissions. Ensure proper grounding and decoupling to minimize radiation.
  • Use low-ESR capacitors with a minimum capacitance of 10uF for input and output filtering. Ensure the capacitors are rated for the maximum operating voltage and temperature.

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FDWS9509L-F085 Overview

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