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FF2MR12KM1PHOSA1 - Infineon

Description: MOSFET Modules MEDIUM POWER 62MM

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FF2MR12KM1PHOSA1 - Infineon  - 3D model
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FF2MR12KM1PHOSA1 Details

  • Manufacturer Part Number:

    FF2MR12KM1PHOSA1

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    4 Weeks

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    0

  • Configuration:

    SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    1200 V

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    302 pF

  • JESD-30 Code:

    R-XUFM-X7

  • Number of Elements:

    2

  • Number of Terminals:

    7

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -40 °C

  • Package Body Material:

    UNSPECIFIED

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Polarity/Channel Type:

    N-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    1000 A

  • Reference Standard:

    IEC-61140

  • Surface Mount:

    YES

  • Terminal Form:

    UNSPECIFIED

  • Terminal Position:

    UPPER

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON CARBIDE

FF2MR12KM1PHOSA1 Frequently Asked Questions (FAQs)

  • For optimal performance, it's recommended to follow Infineon's application note AN2013-01 for PCB layout and thermal management guidelines. This includes using a multi-layer PCB, placing the device near a heat sink, and ensuring good thermal conductivity.
  • To ensure EMC, follow Infineon's guidelines for PCB layout, shielding, and filtering. Additionally, consider using a common-mode choke and a shielded cable to minimize electromagnetic interference.
  • The FF2MR12KM1PHOSA1 has a high reliability rating, with a mean time to failure (MTTF) of over 10 million hours. The device is also qualified according to AEC-Q101, ensuring its suitability for automotive applications.
  • The FF2MR12KM1PHOSA1 is rated for operation up to 150°C, making it suitable for high-temperature applications. However, it's essential to ensure proper thermal management and consider derating the device's performance at elevated temperatures.
  • For troubleshooting, refer to Infineon's application notes and technical documentation. Use oscilloscopes and logic analyzers to debug issues, and consider using Infineon's development boards and evaluation kits for easier testing and validation.

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FF2MR12KM1PHOSA1 Overview

Use the download button to access the FF2MR12KM1PHOSA1 3D model. You can still request or build the schematic symbol and PCB footprint by using the respective build or request forms on this page.
To find more CAD model downloads similar to this part, try a partial part number search, like FF2MR, or try a keyword search, such as Power Field-Effect Transistors

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