SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE
JESD-30 Code:
R-XUFM-X5
Number of Elements:
2
Number of Terminals:
5
Operating Temperature-Max:
175 °C
Package Body Material:
UNSPECIFIED
Package Shape:
RECTANGULAR
Package Style:
FLANGE MOUNT
Peak Reflow Temperature (Cel):
NOT SPECIFIED
Polarity/Channel Type:
N-CHANNEL
Qualification Status:
Not Qualified
Surface Mount:
NO
Terminal Form:
UNSPECIFIED
Terminal Position:
UPPER
Time@Peak Reflow Temperature-Max (s):
NOT SPECIFIED
Transistor Application:
POWER CONTROL
Transistor Element Material:
SILICON
Turn-off Time-Nom (toff):
490 ns
Turn-on Time-Nom (ton):
185 ns
FF75R12RT4HOSA1 Frequently Asked Questions (FAQs)
The maximum operating temperature range for the FF75R12RT4HOSA1 is -40°C to 150°C.
To ensure reliability, follow the recommended thermal management guidelines, use a suitable heat sink, and ensure proper cooling to keep the junction temperature within the specified range.
The recommended gate resistor value for the FF75R12RT4HOSA1 is typically in the range of 10 Ω to 100 Ω, depending on the specific application and switching frequency.
Yes, the FF75R12RT4HOSA1 can be used in a parallel configuration to increase current handling, but ensure proper synchronization and thermal management to avoid uneven current sharing and thermal runaway.
Use a suitable overvoltage protection (OVP) circuit and overcurrent protection (OCP) mechanism, such as a fuse or current sense resistor, to protect the FF75R12RT4HOSA1 from overvoltage and overcurrent conditions.
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FF75R12RT4HOSA1 Overview
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