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FFD08S60S_F085 - onsemi

Description: Diode Switching 600V 8A Automotive AEC-Q101 3-Pin(2+Tab) DPAK T/R

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FFD08S60S_F085 Details

  • Manufacturer Part Number:

    FFD08S60S_F085

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Package Description:

    R-PSSO-G2

  • Reach Compliance Code:

    Compliant

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.10.00.80

  • Factory Lead Time:

    52 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Additional Feature:

    FREE WHEELING DIODE, HIGH RELIABILITY

  • Application:

    HYPERFAST SOFT RECOVERY POWER

  • Case Connection:

    CATHODE

  • Configuration:

    SINGLE

  • Diode Element Material:

    SILICON NITRIDE

  • Diode Type:

    RECTIFIER DIODE

  • Forward Voltage-Max (VF):

    2.6 V

  • JEDEC-95 Code:

    TO-252AA

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Non-rep Pk Forward Current-Max:

    80 A

  • Number of Elements:

    1

  • Number of Phases:

    1

  • Number of Terminals:

    2

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -65 °C

  • Output Current-Max:

    8 A

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Qualification Status:

    Not Qualified

  • Reference Standard:

    AEC-Q101

  • Rep Pk Reverse Voltage-Max:

    600 V

  • Reverse Current-Max:

    100 µA

  • Reverse Recovery Time-Max:

    0.03 µs

  • Reverse Test Voltage:

    600 V

  • Surface Mount:

    YES

  • Technology:

    AVALANCHE

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

FFD08S60S_F085 Frequently Asked Questions (FAQs)

  • A 2-layer PCB with a thermal relief pattern on the bottom layer and a solid ground plane on the top layer is recommended. Ensure a minimum of 1 oz copper thickness and a thermal via array under the device.
  • Ensure proper heat sinking, use a thermal interface material (TIM) with a thermal conductivity of at least 1 W/m-K, and maintain a maximum junction temperature (Tj) of 150°C.
  • A gate drive circuit with a resistive divider network and a gate resistor (Rg) of 10-20 ohms is recommended. Ensure a gate-source voltage (Vgs) of 10-15V for optimal switching performance.
  • Use a TVS diode or a zener diode for overvoltage protection, and a fuse or a current sense resistor for overcurrent protection. Ensure the protection components are rated for the maximum voltage and current of the application.
  • A dead time of 100-200 ns is recommended to ensure proper switching and minimize shoot-through currents.

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FFD08S60S_F085 Overview

Use the download button to access the FFD08S60S_F085 3D model. You can still request or build the schematic symbol and PCB footprint by using the respective build or request forms on this page.
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